TY - JOUR
T1 - Observation of Au nanoparticles on the surface of silicon nanowire grown by rapid thermal chemical vapour deposition
AU - Kwak, Dong Wook
AU - Lee, Dong Wha
AU - Cho, Hoon Young
N1 - Publisher Copyright:
© The Institution of Engineering and Technology 2015.
PY - 2015/3/1
Y1 - 2015/3/1
N2 - The size evolution of gold (Au) nanoparticles (NPs) on the sidewall surface of silicon (Si) nanowires (NWs) has been investigated by thermal treatments, using high-angle annular dark field scanning transmission electron microscopy. The Si NWs grown at 550°C by rapid thermal chemical vapour deposition have been observed to be surrounded by Au NPs with less than 5 nm diameter and ∼1012 cm-2 density on the whole Si NW surface. To explore the size change of Au NPs, the Au NPs on the Si NW were annealed ex situ at the temperature range of 700-900°C for 20 min. The sizes of NPs for samples annealed at 700, 800 and 900°C represent Gaussian distribution with the average size of 4, 6 and 7 nm, respectively, while at high temperatures above 900°C, they change to a bimodal distribution. It is suggested that the surface diffusion rate of Au NPs on Si NW is much lower than that on the Si substrate because of the substitutional diffusion mechanism.
AB - The size evolution of gold (Au) nanoparticles (NPs) on the sidewall surface of silicon (Si) nanowires (NWs) has been investigated by thermal treatments, using high-angle annular dark field scanning transmission electron microscopy. The Si NWs grown at 550°C by rapid thermal chemical vapour deposition have been observed to be surrounded by Au NPs with less than 5 nm diameter and ∼1012 cm-2 density on the whole Si NW surface. To explore the size change of Au NPs, the Au NPs on the Si NW were annealed ex situ at the temperature range of 700-900°C for 20 min. The sizes of NPs for samples annealed at 700, 800 and 900°C represent Gaussian distribution with the average size of 4, 6 and 7 nm, respectively, while at high temperatures above 900°C, they change to a bimodal distribution. It is suggested that the surface diffusion rate of Au NPs on Si NW is much lower than that on the Si substrate because of the substitutional diffusion mechanism.
UR - http://www.scopus.com/inward/record.url?scp=84926504375&partnerID=8YFLogxK
U2 - 10.1049/mnl.2014.0389
DO - 10.1049/mnl.2014.0389
M3 - Article
AN - SCOPUS:84926504375
SN - 1750-0443
VL - 10
SP - 161
EP - 166
JO - Micro and Nano Letters
JF - Micro and Nano Letters
IS - 3
ER -