Observation of bias-dependent noise sources in a TiOx/TiO y bipolar resistive switching frame

Joo Hyung Kim, Ah Rahm Lee, Yoon Cheol Bae, Kwang Ho Baek, Hyun Sik Im, Jin Pyo Hong

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We report the conduction features associated with the evolution of oxygen ions (or vacancies) under bias for a TiOx (oxygen ion-rich)/TiO y (oxygen ion-deficient) bi-layer cell by identifying low-frequency noise sources. It is believed that a low resistance state enhances the formation of conductive filaments exchanging electrons through a nearest-neighbor hopping process, while a high resistance state (HRS) emphasizes the rupture of conductive filaments inside the insulating TiOx layer and a reduction/oxidation reaction at the oxide interfaces. The high resolution transmission electron microscope images of as-grown and HRS cells are also discussed.

Original languageEnglish
Article number083508
JournalApplied Physics Letters
Volume104
Issue number8
DOIs
StatePublished - 24 Feb 2014

Fingerprint

Dive into the research topics of 'Observation of bias-dependent noise sources in a TiOx/TiO y bipolar resistive switching frame'. Together they form a unique fingerprint.

Cite this