Observation of bias-dependent noise sources in a TiOx/TiO y bipolar resistive switching frame

  • Joo Hyung Kim
  • , Ah Rahm Lee
  • , Yoon Cheol Bae
  • , Kwang Ho Baek
  • , Hyun Sik Im
  • , Jin Pyo Hong

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We report the conduction features associated with the evolution of oxygen ions (or vacancies) under bias for a TiOx (oxygen ion-rich)/TiO y (oxygen ion-deficient) bi-layer cell by identifying low-frequency noise sources. It is believed that a low resistance state enhances the formation of conductive filaments exchanging electrons through a nearest-neighbor hopping process, while a high resistance state (HRS) emphasizes the rupture of conductive filaments inside the insulating TiOx layer and a reduction/oxidation reaction at the oxide interfaces. The high resolution transmission electron microscope images of as-grown and HRS cells are also discussed.

Original languageEnglish
Article number083508
JournalApplied Physics Letters
Volume104
Issue number8
DOIs
StatePublished - 24 Feb 2014

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