Observation of Divacancy Formation for ZnON Thin-Film Transistors with Excessive N Content

This study proposes a model of mobility and negative bias stress stability degradation mechanism of zinc oxynitride (ZnON) thin-film transistors (TFTs) with various anion compositions. The subgap density of states (DOS) for ZnON TFTs were extracted using monochromatic photonic capacitance-voltage measurement. The extracted subgap DOS indicated an additional nitrogen-related subgap peak was observed in ZnON TFTs with an excessive nitrogen condition, which might originate from a nitrogen divacancy formation. Furthermore, the shifted threshold voltage components after the bias stress test were quantitatively divided as subgap DOS and interface trapping.