Abstract
In the present study, fabrication of memory devices using sol-gel derived amorphous titanium oxide (a-TiO 2) thin films and its characterization are presented. Titanium oxide thin films of thickness 50 nm were deposited on ITO substrates using a spin coating method. The films annealed at 200 °C for an hour in air atmosphere have shown good transparency in visible region. Bipolar resistive switching behaviors of Al/a-TiO 2/ITO stacked structures were investigated using current-voltage characteristics. The observed current-voltage characteristics have described the bipolar resistive switching property of a-TiO 2 films. Multi-step conductance behavior has been observed in this Al/a-TiO 2/ITO stacked structures and its mechanism has been analyzed.
Original language | English |
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Pages (from-to) | 97-101 |
Number of pages | 5 |
Journal | Microelectronic Engineering |
Volume | 98 |
DOIs | |
State | Published - Oct 2012 |
Keywords
- Optical properties
- ReRAM
- Semiconductor
- Sol-gel growth
- TiO thin films