Observation of multi-conductance state in solution processed Al/a-TiO 2/ITO memory device

V. Senthilkumar, A. Kathalingam, V. Kannan, Jin Koo Rhee

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

In the present study, fabrication of memory devices using sol-gel derived amorphous titanium oxide (a-TiO 2) thin films and its characterization are presented. Titanium oxide thin films of thickness 50 nm were deposited on ITO substrates using a spin coating method. The films annealed at 200 °C for an hour in air atmosphere have shown good transparency in visible region. Bipolar resistive switching behaviors of Al/a-TiO 2/ITO stacked structures were investigated using current-voltage characteristics. The observed current-voltage characteristics have described the bipolar resistive switching property of a-TiO 2 films. Multi-step conductance behavior has been observed in this Al/a-TiO 2/ITO stacked structures and its mechanism has been analyzed.

Original languageEnglish
Pages (from-to)97-101
Number of pages5
JournalMicroelectronic Engineering
Volume98
DOIs
StatePublished - Oct 2012

Keywords

  • Optical properties
  • ReRAM
  • Semiconductor
  • Sol-gel growth
  • TiO thin films

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