Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod

A. Kathalingam; Hyun Seok Kim; Sam Dong Kim; Hyung Moo Park; Hyun Chang Park

doi:10.1016/j.physe.2015.06.030

Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod

A. Kathalingam, Hyun Seok Kim, Sam Dong Kim, Hyung Moo Park, Hyun Chang Park

Dongguk University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Abstract We report the observation of negative differential resistance (NDR) in solution synthesized ZnO nanorod. The ZnO nanorod was fabricated as a two terminal planar device using lithographically patterned Au electrodes. The measured current-voltage response of the device has shown a negative differential resistance behavior. The peak-to-valley current ratio of the NDR is found to be greater than 4. The mechanism of this observed NDR effect has been explained based on charge trapping and de-trapping at the nanoscale contacts. It is the first observation of negative differential resistance effect in solution synthesized ZnO nanorod.

Original language	English
Article number	12017
Pages (from-to)	241-243
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	74
DOIs	https://doi.org/10.1016/j.physe.2015.06.030
State	Published - 20 Jul 2015

Keywords

Lithography
Metal-semiconductor contact
Nanoscale device
Negative differential resistance
Planar device
ZnO nanorod

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10.1016/j.physe.2015.06.030

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title = "Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod",

abstract = "Abstract We report the observation of negative differential resistance (NDR) in solution synthesized ZnO nanorod. The ZnO nanorod was fabricated as a two terminal planar device using lithographically patterned Au electrodes. The measured current-voltage response of the device has shown a negative differential resistance behavior. The peak-to-valley current ratio of the NDR is found to be greater than 4. The mechanism of this observed NDR effect has been explained based on charge trapping and de-trapping at the nanoscale contacts. It is the first observation of negative differential resistance effect in solution synthesized ZnO nanorod.",

keywords = "Lithography, Metal-semiconductor contact, Nanoscale device, Negative differential resistance, Planar device, ZnO nanorod",

author = "A. Kathalingam and Kim, {Hyun Seok} and Kim, {Sam Dong} and Park, {Hyung Moo} and Park, {Hyun Chang}",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

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doi = "10.1016/j.physe.2015.06.030",

language = "English",

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journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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T1 - Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod

AU - Kathalingam, A.

AU - Kim, Hyun Seok

AU - Kim, Sam Dong

AU - Park, Hyung Moo

AU - Park, Hyun Chang

PY - 2015/7/20

Y1 - 2015/7/20

N2 - Abstract We report the observation of negative differential resistance (NDR) in solution synthesized ZnO nanorod. The ZnO nanorod was fabricated as a two terminal planar device using lithographically patterned Au electrodes. The measured current-voltage response of the device has shown a negative differential resistance behavior. The peak-to-valley current ratio of the NDR is found to be greater than 4. The mechanism of this observed NDR effect has been explained based on charge trapping and de-trapping at the nanoscale contacts. It is the first observation of negative differential resistance effect in solution synthesized ZnO nanorod.

AB - Abstract We report the observation of negative differential resistance (NDR) in solution synthesized ZnO nanorod. The ZnO nanorod was fabricated as a two terminal planar device using lithographically patterned Au electrodes. The measured current-voltage response of the device has shown a negative differential resistance behavior. The peak-to-valley current ratio of the NDR is found to be greater than 4. The mechanism of this observed NDR effect has been explained based on charge trapping and de-trapping at the nanoscale contacts. It is the first observation of negative differential resistance effect in solution synthesized ZnO nanorod.

KW - Lithography

KW - Metal-semiconductor contact

KW - Nanoscale device

KW - Negative differential resistance

KW - Planar device

KW - ZnO nanorod

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DO - 10.1016/j.physe.2015.06.030

M3 - Article

AN - SCOPUS:84937206747

SN - 1386-9477

VL - 74

SP - 241

EP - 243

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

M1 - 12017

ER -

Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod

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