Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod

A. Kathalingam; Hyun Seok Kim; Sam Dong Kim; Hyung Moo Park; Hyun Chang Park

doi:10.1016/j.physe.2015.06.030

Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod

A. Kathalingam
, Hyun Seok Kim
, Sam Dong Kim
, Hyung Moo Park
, Hyun Chang Park

Dongguk University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Abstract We report the observation of negative differential resistance (NDR) in solution synthesized ZnO nanorod. The ZnO nanorod was fabricated as a two terminal planar device using lithographically patterned Au electrodes. The measured current-voltage response of the device has shown a negative differential resistance behavior. The peak-to-valley current ratio of the NDR is found to be greater than 4. The mechanism of this observed NDR effect has been explained based on charge trapping and de-trapping at the nanoscale contacts. It is the first observation of negative differential resistance effect in solution synthesized ZnO nanorod.

Original language	English
Article number	12017
Pages (from-to)	241-243
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	74
DOIs	https://doi.org/10.1016/j.physe.2015.06.030
State	Published - 20 Jul 2015

Keywords

Lithography
Metal-semiconductor contact
Nanoscale device
Negative differential resistance
Planar device
ZnO nanorod

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10.1016/j.physe.2015.06.030

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title = "Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod",

abstract = "Abstract We report the observation of negative differential resistance (NDR) in solution synthesized ZnO nanorod. The ZnO nanorod was fabricated as a two terminal planar device using lithographically patterned Au electrodes. The measured current-voltage response of the device has shown a negative differential resistance behavior. The peak-to-valley current ratio of the NDR is found to be greater than 4. The mechanism of this observed NDR effect has been explained based on charge trapping and de-trapping at the nanoscale contacts. It is the first observation of negative differential resistance effect in solution synthesized ZnO nanorod.",

keywords = "Lithography, Metal-semiconductor contact, Nanoscale device, Negative differential resistance, Planar device, ZnO nanorod",

author = "A. Kathalingam and Kim, \{Hyun Seok\} and Kim, \{Sam Dong\} and Park, \{Hyung Moo\} and Park, \{Hyun Chang\}",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

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doi = "10.1016/j.physe.2015.06.030",

language = "English",

volume = "74",

pages = "241--243",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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TY - JOUR

T1 - Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod

AU - Kathalingam, A.

AU - Kim, Hyun Seok

AU - Kim, Sam Dong

AU - Park, Hyung Moo

AU - Park, Hyun Chang

PY - 2015/7/20

Y1 - 2015/7/20

N2 - Abstract We report the observation of negative differential resistance (NDR) in solution synthesized ZnO nanorod. The ZnO nanorod was fabricated as a two terminal planar device using lithographically patterned Au electrodes. The measured current-voltage response of the device has shown a negative differential resistance behavior. The peak-to-valley current ratio of the NDR is found to be greater than 4. The mechanism of this observed NDR effect has been explained based on charge trapping and de-trapping at the nanoscale contacts. It is the first observation of negative differential resistance effect in solution synthesized ZnO nanorod.

AB - Abstract We report the observation of negative differential resistance (NDR) in solution synthesized ZnO nanorod. The ZnO nanorod was fabricated as a two terminal planar device using lithographically patterned Au electrodes. The measured current-voltage response of the device has shown a negative differential resistance behavior. The peak-to-valley current ratio of the NDR is found to be greater than 4. The mechanism of this observed NDR effect has been explained based on charge trapping and de-trapping at the nanoscale contacts. It is the first observation of negative differential resistance effect in solution synthesized ZnO nanorod.

KW - Lithography

KW - Metal-semiconductor contact

KW - Nanoscale device

KW - Negative differential resistance

KW - Planar device

KW - ZnO nanorod

UR - https://www.scopus.com/pages/publications/84937206747

U2 - 10.1016/j.physe.2015.06.030

DO - 10.1016/j.physe.2015.06.030

M3 - Article

AN - SCOPUS:84937206747

SN - 1386-9477

VL - 74

SP - 241

EP - 243

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

M1 - 12017

ER -

Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod

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Keywords

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