Abstract
Single electron transport through multiple quantum levels is realized in a Si quantum-dot device at room-temperature conditions. The energy spacing of more than triple the omnipresent thermal energy is obtained from an extremely small ellipsoidal Si quantum dot, and high charge stability is attained through a construction of the gate-all-around structure. These properties may move us a step closer to practical applications of quantum devices at elevated temperatures. An in-depth analysis on the transport behavior and quantum structure is presented.
Original language | English |
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Pages (from-to) | 71-77 |
Number of pages | 7 |
Journal | Nano Letters |
Volume | 14 |
Issue number | 1 |
DOIs | |
State | Published - 8 Jan 2014 |
Keywords
- large quantum-level spacings
- quantum dot
- room temperature
- Silicon