Observation of single electron transport via multiple quantum states of a silicon quantum dot at room temperature

Sejoon Lee, Youngmin Lee, Emil B. Song, Toshiro Hiramoto

Research output: Contribution to journalArticlepeer-review

58 Scopus citations

Abstract

Single electron transport through multiple quantum levels is realized in a Si quantum-dot device at room-temperature conditions. The energy spacing of more than triple the omnipresent thermal energy is obtained from an extremely small ellipsoidal Si quantum dot, and high charge stability is attained through a construction of the gate-all-around structure. These properties may move us a step closer to practical applications of quantum devices at elevated temperatures. An in-depth analysis on the transport behavior and quantum structure is presented.

Original languageEnglish
Pages (from-to)71-77
Number of pages7
JournalNano Letters
Volume14
Issue number1
DOIs
StatePublished - 8 Jan 2014

Keywords

  • large quantum-level spacings
  • quantum dot
  • room temperature
  • Silicon

Fingerprint

Dive into the research topics of 'Observation of single electron transport via multiple quantum states of a silicon quantum dot at room temperature'. Together they form a unique fingerprint.

Cite this