TY - JOUR
T1 - Observation of Spin-Induced Ferroelectricity in a Layered van der Waals Antiferromagnet CuCrP2S6
AU - Park, Chang Bae
AU - Shahee, Aga
AU - Kim, Kwang Tak
AU - Patil, Deepak R.
AU - Guda, Sergey Alexandrovich
AU - Ter-Oganessian, Nikita
AU - Kim, Kee Hoon
N1 - Publisher Copyright:
© 2022 Wiley-VCH GmbH.
PY - 2022/6
Y1 - 2022/6
N2 - CuCrP2S6, a van der Waals magnet having stacked layers of 2D honeycomb lattice made of CuS3 triangles and CrS6 octahedra, exhibits an A-type antiferromagnetic order with the Néel temperature (TN) = 32 K. Upon in-plane magnetic field (H) being applied below TN, H-induced modulation of the c*-axis electric polarization (ΔPc*) is found at fields lower than the saturation field µ0HS = 6.1 T, at which a forced ferromagnetic alignment sets in. Based on the symmetry analyses and dependence of ΔPc* on H and the azimuthal angle of applied H direction, a microscopic origin of the magnetoelectric (ME) coupling is attributed to the spin-direction-dependent p–d hybridization that is allowed due to the presence of off-centered Cr3+ octahedra. A comparative study on CuCrP2Se6, however, finds no H-induced P modulation due to cancellation of P between neighboring layers with the doubling of a crystallographic unit cell at TN. As the p–d hybridization mechanism allows generation of P in a single Cr atom–ligand pair, the results imply that large ME coupling should exist even in a single layer limit of CuCrP2S6.
AB - CuCrP2S6, a van der Waals magnet having stacked layers of 2D honeycomb lattice made of CuS3 triangles and CrS6 octahedra, exhibits an A-type antiferromagnetic order with the Néel temperature (TN) = 32 K. Upon in-plane magnetic field (H) being applied below TN, H-induced modulation of the c*-axis electric polarization (ΔPc*) is found at fields lower than the saturation field µ0HS = 6.1 T, at which a forced ferromagnetic alignment sets in. Based on the symmetry analyses and dependence of ΔPc* on H and the azimuthal angle of applied H direction, a microscopic origin of the magnetoelectric (ME) coupling is attributed to the spin-direction-dependent p–d hybridization that is allowed due to the presence of off-centered Cr3+ octahedra. A comparative study on CuCrP2Se6, however, finds no H-induced P modulation due to cancellation of P between neighboring layers with the doubling of a crystallographic unit cell at TN. As the p–d hybridization mechanism allows generation of P in a single Cr atom–ligand pair, the results imply that large ME coupling should exist even in a single layer limit of CuCrP2S6.
KW - CuCrP S
KW - magnetoelectric coupling
KW - multiferroics
KW - spin-induced ferroelectricity
KW - van der Waals compounds
UR - https://www.scopus.com/pages/publications/85122740477
U2 - 10.1002/aelm.202101072
DO - 10.1002/aelm.202101072
M3 - Article
AN - SCOPUS:85122740477
SN - 2199-160X
VL - 8
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 6
M1 - 2101072
ER -