Operational improvement of AlGaN/GaN high electron mobility transistor by an inner field-plate structure

Hyeon Tak Kwak, Seung Bo Chang, Hyun Jung Kim, Kyu Won Jang, Hyung Sup Yoon, Sang Heung Lee, Jong Won Lim, Hyun Seok Kim

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

In this study, a high-performance AlGaN/GaN high electron mobility transistor (HEMT) is presented to improve its electrical operation by employing an inner field-plate (IFP) structure. Prior to the IFP structure analysis, we compared the measured and simulated direct current characteristics of the fabricated two-finger conventional T-shaped gate HEMTs. Then, the AlGaN/GaN HEMT with a drain-side field plate (FP) structure was suggested to enhance the breakdown voltage characteristics. The maximum breakdown voltage recorded with a 0.8 μm stretched FP structure was 669 V. Finally, the IFP structure was interfaced with the gate head of the device to compensate the radio frequency characteristics, choosing the optimum length of the drain-side FP structure. Compared to the 0.8 μm stretched FP structure, the IFP structure showed improved frequency characteristics with minimal difference to the breakdown voltage. The frequency variation caused by changing the passivation thickness was also analyzed, and the optimum thickness was identified. Thus, IFP AlGaN/GaN HEMT is a promising candidate for high-power and high-frequency applications.

Original languageEnglish
Article number974
JournalApplied Sciences (Switzerland)
Volume8
Issue number6
DOIs
StatePublished - 14 Jun 2018

Keywords

  • Breakdown voltage
  • Cut-offfrequency
  • Field plate
  • Gallium Nitride
  • Maximum frequency

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