Optical and Electrical Properties of Si Nanocrystals Embedded in SiO 2 Layers

Sejoon Lee; Young Suk Shim; Hoon Young CHo; Deuk Young Kim; Tae Whan Kim; Kang L. Wang

doi:10.1143/jjap.42.7180

Optical and Electrical Properties of Si Nanocrystals Embedded in SiO ₂ Layers

Sejoon Lee
, Young Suk Shim
, Hoon Young CHo
, Deuk Young Kim
, Tae Whan Kim
, Kang L. Wang

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Si nanocrystals were formed using a Pt nanoscale island etching mask. A high-resolution transmission electron microscopy image showed that the Si nanocrystals were created inside a SiO₂ layer, and the cathodoluminescence spectrum showed that the luminescence peak is related to the Si nanocrystals. Capacitance-voltage measurements on Al/SiO ₂/nanocrystalline Si/SiO₂/p-Si structures at 300 K showed that the value of the flatband voltage shift increased parabolically with increasing Si nanocrystal size. These results indicate that Si nanocrystals can be formed using a Pt island etching mask and that the magnitude of the flatband voltage shift for the Al/SiO₂/nanocrystalline Si/SiO ₂/p-Si structures is significantly affected by the size of the Si nanocrystals embedded in the SiO₂ layer.

Original language	English
Pages (from-to)	7180-7183
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	12
DOIs	https://doi.org/10.1143/jjap.42.7180
State	Published - Dec 2003

Keywords

Flatband voltage shift
Luminescence
Metal-insulator-semiconductor behavior
Si nanocrystals

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10.1143/jjap.42.7180

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title = "Optical and Electrical Properties of Si Nanocrystals Embedded in SiO 2 Layers",

abstract = "Si nanocrystals were formed using a Pt nanoscale island etching mask. A high-resolution transmission electron microscopy image showed that the Si nanocrystals were created inside a SiO2 layer, and the cathodoluminescence spectrum showed that the luminescence peak is related to the Si nanocrystals. Capacitance-voltage measurements on Al/SiO 2/nanocrystalline Si/SiO2/p-Si structures at 300 K showed that the value of the flatband voltage shift increased parabolically with increasing Si nanocrystal size. These results indicate that Si nanocrystals can be formed using a Pt island etching mask and that the magnitude of the flatband voltage shift for the Al/SiO2/nanocrystalline Si/SiO 2/p-Si structures is significantly affected by the size of the Si nanocrystals embedded in the SiO2 layer.",

keywords = "Flatband voltage shift, Luminescence, Metal-insulator-semiconductor behavior, Si nanocrystals",

author = "Sejoon Lee and Shim, \{Young Suk\} and CHo, \{Hoon Young\} and Kim, \{Deuk Young\} and Kim, \{Tae Whan\} and Wang, \{Kang L.\}",

year = "2003",

month = dec,

doi = "10.1143/jjap.42.7180",

language = "English",

volume = "42",

pages = "7180--7183",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

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TY - JOUR

T1 - Optical and Electrical Properties of Si Nanocrystals Embedded in SiO 2 Layers

AU - Lee, Sejoon

AU - Shim, Young Suk

AU - CHo, Hoon Young

AU - Kim, Deuk Young

AU - Kim, Tae Whan

AU - Wang, Kang L.

PY - 2003/12

Y1 - 2003/12

N2 - Si nanocrystals were formed using a Pt nanoscale island etching mask. A high-resolution transmission electron microscopy image showed that the Si nanocrystals were created inside a SiO2 layer, and the cathodoluminescence spectrum showed that the luminescence peak is related to the Si nanocrystals. Capacitance-voltage measurements on Al/SiO 2/nanocrystalline Si/SiO2/p-Si structures at 300 K showed that the value of the flatband voltage shift increased parabolically with increasing Si nanocrystal size. These results indicate that Si nanocrystals can be formed using a Pt island etching mask and that the magnitude of the flatband voltage shift for the Al/SiO2/nanocrystalline Si/SiO 2/p-Si structures is significantly affected by the size of the Si nanocrystals embedded in the SiO2 layer.

AB - Si nanocrystals were formed using a Pt nanoscale island etching mask. A high-resolution transmission electron microscopy image showed that the Si nanocrystals were created inside a SiO2 layer, and the cathodoluminescence spectrum showed that the luminescence peak is related to the Si nanocrystals. Capacitance-voltage measurements on Al/SiO 2/nanocrystalline Si/SiO2/p-Si structures at 300 K showed that the value of the flatband voltage shift increased parabolically with increasing Si nanocrystal size. These results indicate that Si nanocrystals can be formed using a Pt island etching mask and that the magnitude of the flatband voltage shift for the Al/SiO2/nanocrystalline Si/SiO 2/p-Si structures is significantly affected by the size of the Si nanocrystals embedded in the SiO2 layer.

KW - Flatband voltage shift

KW - Luminescence

KW - Metal-insulator-semiconductor behavior

KW - Si nanocrystals

UR - https://www.scopus.com/pages/publications/1242332887

U2 - 10.1143/jjap.42.7180

DO - 10.1143/jjap.42.7180

M3 - Article

AN - SCOPUS:1242332887

SN - 0021-4922

VL - 42

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EP - 7183

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 12

ER -

Optical and Electrical Properties of Si Nanocrystals Embedded in SiO ₂ Layers

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Keywords

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