Abstract
The optical and the magnetic properties of (Ga1-xMn x)N/GaN digital ferromagnetic heterostructures (DFHs) grown by using molecular beam epitaxy were investigated. The photoluminescence (PL) spectra showed band-edge exciton and exciton transitions between the conduction band and the Mn acceptor, indicative of the Mn atoms acting as substitutes, which corresponded to neutral donor-bound exciton for the GaMnN and GaN. The magnetization curves as functions of the magnetic field at 5 K indicated that the saturation magnetic moment in the (Ga1-xMnx)N/GaN DFHs decreased with increasing Mn mole fraction. The ferromagnetic properties of GaMnN/GaN DFHs were significantly affected by the hole concentration in the DFHs.
Original language | English |
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Pages (from-to) | 989-991 |
Number of pages | 3 |
Journal | Journal of the Korean Physical Society |
Volume | 49 |
Issue number | 3 |
State | Published - Sep 2006 |
Keywords
- (GaMn)N/GaN-based heterostructures
- Magnetic properties
- Optical properties