Abstract
The formation of (Ga1-xMnx)As thin films with both semiconducting and magnetic properties was discussed. The Mn+ ion implantation and thermal annealing were used for the purpose, with a goal of producing (Ga1-xMnx)As with a high ferromagnetic transition temperature Tc. It was observed from the energy dispersive x-ray fluorescence measurements, that the Mn+-implanted neutron-transmutation-doped (NTD) GaAs samples were (Ga1-xMn x)As thin films. It was also found from the photoluminescence spectra, that the annealed (Ga1-xMnx)As thin films were p-type semiconductors films.
Original language | English |
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Pages (from-to) | 2029-2032 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 96 |
Issue number | 4 |
DOIs | |
State | Published - 15 Aug 2004 |