Optical and magnetic properties of Mn+-implanted neutron-transmutation-doped GaAs bulks

Y. H. Kwon, Y. Shon, W. C. Lee, D. J. Fu, H. C. Jeon, T. W. Kang, T. W. Kim, X. J. Fan

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The formation of (Ga1-xMnx)As thin films with both semiconducting and magnetic properties was discussed. The Mn+ ion implantation and thermal annealing were used for the purpose, with a goal of producing (Ga1-xMnx)As with a high ferromagnetic transition temperature Tc. It was observed from the energy dispersive x-ray fluorescence measurements, that the Mn+-implanted neutron-transmutation-doped (NTD) GaAs samples were (Ga1-xMn x)As thin films. It was also found from the photoluminescence spectra, that the annealed (Ga1-xMnx)As thin films were p-type semiconductors films.

Original languageEnglish
Pages (from-to)2029-2032
Number of pages4
JournalJournal of Applied Physics
Volume96
Issue number4
DOIs
StatePublished - 15 Aug 2004

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