Optical and magnetic properties of Mn⁺-implanted neutron-transmutation-doped GaAs bulks

The formation of (Ga_1-xMn_x)As thin films with both semiconducting and magnetic properties was discussed. The Mn⁺ ion implantation and thermal annealing were used for the purpose, with a goal of producing (Ga_1-xMn_x)As with a high ferromagnetic transition temperature T_c. It was observed from the energy dispersive x-ray fluorescence measurements, that the Mn⁺-implanted neutron-transmutation-doped (NTD) GaAs samples were (Ga_1-xMn _x)As thin films. It was also found from the photoluminescence spectra, that the annealed (Ga_1-xMn_x)As thin films were p-type semiconductors films.