Optical and magnetic properties of ten-period InGaMnAs/GaAs quantum wells

Im Taek Yoon; Sejoon Lee; Yoon Shon; Younghae Kwon; Young S. Park; Tae Won Kang

doi:10.1007/s10948-013-2230-4

Optical and magnetic properties of ten-period InGaMnAs/GaAs quantum wells

Im Taek Yoon, Sejoon Lee, Yoon Shon, Younghae Kwon, Young S. Park, Tae Won Kang

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Ten layers of InGaMnAs/GaAs multiquantum wells (MQWs) structure were grown on high resistivity (100) p-type GaAs substrates by molecular beam epitaxy (MBE). A presence of the ferromagnetic structure was confirmed in the InGaMnAs/GaAs MQWs structure, and have ferromagnetic ordering with a Curie temperature, T_C=50 K. It is likely that the ferromagnetic exchange coupling of the sample with T_C=50 K is hole-mediated resulting in Mn substituting In or Ga sites. PL emission spectra of the InGaMnAs MQWs sample grown at a temperature of 170 C show that an activation energy of the Mn ion on the first quantum confinement level in InGaAs QW is 32 meV and impurity Mn is partly ionized. The fact that the activation energy of 32 meV of Mn ion in the QW is lower than an activation energy of 110 meV for a substitutional Mn impurity in GaAs, indicating an impurity band existing in the bandgap due to substitutional Mn ions.

Original language	English
Pages (from-to)	3529-3532
Number of pages	4
Journal	Journal of Superconductivity and Novel Magnetism
Volume	26
Issue number	12
DOIs	https://doi.org/10.1007/s10948-013-2230-4
State	Published - Dec 2013

Keywords

Ferromagnetism
Multiquantum well
Optical properties

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title = "Optical and magnetic properties of ten-period InGaMnAs/GaAs quantum wells",

abstract = "Ten layers of InGaMnAs/GaAs multiquantum wells (MQWs) structure were grown on high resistivity (100) p-type GaAs substrates by molecular beam epitaxy (MBE). A presence of the ferromagnetic structure was confirmed in the InGaMnAs/GaAs MQWs structure, and have ferromagnetic ordering with a Curie temperature, TC=50 K. It is likely that the ferromagnetic exchange coupling of the sample with TC=50 K is hole-mediated resulting in Mn substituting In or Ga sites. PL emission spectra of the InGaMnAs MQWs sample grown at a temperature of 170 C show that an activation energy of the Mn ion on the first quantum confinement level in InGaAs QW is 32 meV and impurity Mn is partly ionized. The fact that the activation energy of 32 meV of Mn ion in the QW is lower than an activation energy of 110 meV for a substitutional Mn impurity in GaAs, indicating an impurity band existing in the bandgap due to substitutional Mn ions.",

keywords = "Ferromagnetism, Multiquantum well, Optical properties",

author = "Yoon, {Im Taek} and Sejoon Lee and Yoon Shon and Younghae Kwon and Park, {Young S.} and Kang, {Tae Won}",

year = "2013",

month = dec,

doi = "10.1007/s10948-013-2230-4",

language = "English",

volume = "26",

pages = "3529--3532",

journal = "Journal of Superconductivity and Novel Magnetism",

issn = "1557-1939",

publisher = "Springer New York",

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}

TY - JOUR

T1 - Optical and magnetic properties of ten-period InGaMnAs/GaAs quantum wells

AU - Yoon, Im Taek

AU - Lee, Sejoon

AU - Shon, Yoon

AU - Kwon, Younghae

AU - Park, Young S.

AU - Kang, Tae Won

PY - 2013/12

Y1 - 2013/12

N2 - Ten layers of InGaMnAs/GaAs multiquantum wells (MQWs) structure were grown on high resistivity (100) p-type GaAs substrates by molecular beam epitaxy (MBE). A presence of the ferromagnetic structure was confirmed in the InGaMnAs/GaAs MQWs structure, and have ferromagnetic ordering with a Curie temperature, TC=50 K. It is likely that the ferromagnetic exchange coupling of the sample with TC=50 K is hole-mediated resulting in Mn substituting In or Ga sites. PL emission spectra of the InGaMnAs MQWs sample grown at a temperature of 170 C show that an activation energy of the Mn ion on the first quantum confinement level in InGaAs QW is 32 meV and impurity Mn is partly ionized. The fact that the activation energy of 32 meV of Mn ion in the QW is lower than an activation energy of 110 meV for a substitutional Mn impurity in GaAs, indicating an impurity band existing in the bandgap due to substitutional Mn ions.

AB - Ten layers of InGaMnAs/GaAs multiquantum wells (MQWs) structure were grown on high resistivity (100) p-type GaAs substrates by molecular beam epitaxy (MBE). A presence of the ferromagnetic structure was confirmed in the InGaMnAs/GaAs MQWs structure, and have ferromagnetic ordering with a Curie temperature, TC=50 K. It is likely that the ferromagnetic exchange coupling of the sample with TC=50 K is hole-mediated resulting in Mn substituting In or Ga sites. PL emission spectra of the InGaMnAs MQWs sample grown at a temperature of 170 C show that an activation energy of the Mn ion on the first quantum confinement level in InGaAs QW is 32 meV and impurity Mn is partly ionized. The fact that the activation energy of 32 meV of Mn ion in the QW is lower than an activation energy of 110 meV for a substitutional Mn impurity in GaAs, indicating an impurity band existing in the bandgap due to substitutional Mn ions.

KW - Ferromagnetism

KW - Multiquantum well

KW - Optical properties

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U2 - 10.1007/s10948-013-2230-4

DO - 10.1007/s10948-013-2230-4

M3 - Article

AN - SCOPUS:84886780191

SN - 1557-1939

VL - 26

SP - 3529

EP - 3532

JO - Journal of Superconductivity and Novel Magnetism

JF - Journal of Superconductivity and Novel Magnetism

IS - 12

ER -

Optical and magnetic properties of ten-period InGaMnAs/GaAs quantum wells

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Keywords

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