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Optical and magnetic properties of ten-period InGaMnAs/GaAs quantum wells
Im Taek Yoon
,
Sejoon Lee
, Yoon Shon
, Younghae Kwon
, Young S. Park
, Tae Won Kang
Division of System Semiconductor
Dongguk University
Pohang University of Science and Technology
Research output
:
Contribution to journal
›
Article
›
peer-review
3
Scopus citations
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Material Science
Magnetic Property
100%
Gallium Arsenide
100%
Optical Property
100%
Quantum Well
100%
Activation Energy
60%
Molecular Beam Epitaxy
20%
Electrical Resistivity
20%
Curie Temperature
20%
Indium Gallium Arsenide
20%
Physics
Optical Property
100%
Quantum Wells
100%
Magnetic Property
100%
Activation Energy
100%
Molecular Beam Epitaxy
33%
Curie Temperature
33%
Exchange Coupling
33%
Energy Gaps (Solid State)
33%
Engineering
Gallium Arsenide
100%
Quantum Well
100%
Activation Energy
75%
Band Gap
25%
Indium Gallium Arsenide
25%
Emission Spectra
25%
Quantum Confinement
25%
Gaas Substrate
25%
Chemistry
Optical Property
100%
Magnetic Property
100%
Reaction Activation Energy
100%
Band Gap
33%
Emission Spectra
33%
Ferromagnetic Exchange
33%