Abstract
The optical properties and the deep levels in bulk Si1-xMnx formed by using an implantation and annealing method were investigated. Transmission electron microscopy, X-ray diffraction, and Hall-effect measurements showed that the annealed bulk Si1-xMnx samples were p-type crystalline semiconductors. The photoluminescence spectra for the annealed bulk Si1-xMnx material showed luminescence peaks corresponding to excitons bound to neutral acceptors and related to dislocations due to the existence of Mn impurities. Deep-level transient spectroscopy results for the annealed bulk Si1-xMnx showed deep levels related to the interstitial and substitutial sites of the Mn+ ions. These results can help improve understanding of the optical properties and the deep levels in annealed bulk Si1-xMnx material.
Original language | English |
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Pages (from-to) | 14-17 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 140 |
Issue number | 1 |
DOIs | |
State | Published - Oct 2006 |
Keywords
- A. Semiconductors
- C. Impurities in semiconductor
- D. Electronic states
- D. Optical properties