Optical properties and deep levels in annealed Si1-xMnx bulk materials

Y. H. Kwon; T. W. Kang; C. J. Park; H. Y. Cho; T. W. Kim; J. Y. Lee; Kang L. Wang; B. O. Kim; S. M. Kim; Yong Hoon Cho

doi:10.1016/j.ssc.2006.07.032

Optical properties and deep levels in annealed Si_1-xMn_x bulk materials

Y. H. Kwon
, T. W. Kang
, C. J. Park
, H. Y. Cho
, T. W. Kim
, J. Y. Lee
, Kang L. Wang
, B. O. Kim
, S. M. Kim
, Yong Hoon Cho

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The optical properties and the deep levels in bulk Si_1-xMn_x formed by using an implantation and annealing method were investigated. Transmission electron microscopy, X-ray diffraction, and Hall-effect measurements showed that the annealed bulk Si_1-xMn_x samples were p-type crystalline semiconductors. The photoluminescence spectra for the annealed bulk Si_1-xMn_x material showed luminescence peaks corresponding to excitons bound to neutral acceptors and related to dislocations due to the existence of Mn impurities. Deep-level transient spectroscopy results for the annealed bulk Si_1-xMn_x showed deep levels related to the interstitial and substitutial sites of the Mn⁺ ions. These results can help improve understanding of the optical properties and the deep levels in annealed bulk Si_1-xMn_x material.

Original language	English
Pages (from-to)	14-17
Number of pages	4
Journal	Solid State Communications
Volume	140
Issue number	1
DOIs	https://doi.org/10.1016/j.ssc.2006.07.032
State	Published - Oct 2006

Keywords

A. Semiconductors
C. Impurities in semiconductor
D. Electronic states
D. Optical properties

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10.1016/j.ssc.2006.07.032

Cite this

@article{9d05cb367cd34b9c80f9188b1f865fdc,

title = "Optical properties and deep levels in annealed Si1-xMnx bulk materials",

abstract = "The optical properties and the deep levels in bulk Si1-xMnx formed by using an implantation and annealing method were investigated. Transmission electron microscopy, X-ray diffraction, and Hall-effect measurements showed that the annealed bulk Si1-xMnx samples were p-type crystalline semiconductors. The photoluminescence spectra for the annealed bulk Si1-xMnx material showed luminescence peaks corresponding to excitons bound to neutral acceptors and related to dislocations due to the existence of Mn impurities. Deep-level transient spectroscopy results for the annealed bulk Si1-xMnx showed deep levels related to the interstitial and substitutial sites of the Mn+ ions. These results can help improve understanding of the optical properties and the deep levels in annealed bulk Si1-xMnx material.",

keywords = "A. Semiconductors, C. Impurities in semiconductor, D. Electronic states, D. Optical properties",

author = "Kwon, \{Y. H.\} and Kang, \{T. W.\} and Park, \{C. J.\} and Cho, \{H. Y.\} and Kim, \{T. W.\} and Lee, \{J. Y.\} and Wang, \{Kang L.\} and Kim, \{B. O.\} and Kim, \{S. M.\} and Cho, \{Yong Hoon\}",

year = "2006",

month = oct,

doi = "10.1016/j.ssc.2006.07.032",

language = "English",

volume = "140",

pages = "14--17",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "1",

}

TY - JOUR

T1 - Optical properties and deep levels in annealed Si1-xMnx bulk materials

AU - Kwon, Y. H.

AU - Kang, T. W.

AU - Park, C. J.

AU - Cho, H. Y.

AU - Kim, T. W.

AU - Lee, J. Y.

AU - Wang, Kang L.

AU - Kim, B. O.

AU - Kim, S. M.

AU - Cho, Yong Hoon

PY - 2006/10

Y1 - 2006/10

N2 - The optical properties and the deep levels in bulk Si1-xMnx formed by using an implantation and annealing method were investigated. Transmission electron microscopy, X-ray diffraction, and Hall-effect measurements showed that the annealed bulk Si1-xMnx samples were p-type crystalline semiconductors. The photoluminescence spectra for the annealed bulk Si1-xMnx material showed luminescence peaks corresponding to excitons bound to neutral acceptors and related to dislocations due to the existence of Mn impurities. Deep-level transient spectroscopy results for the annealed bulk Si1-xMnx showed deep levels related to the interstitial and substitutial sites of the Mn+ ions. These results can help improve understanding of the optical properties and the deep levels in annealed bulk Si1-xMnx material.

AB - The optical properties and the deep levels in bulk Si1-xMnx formed by using an implantation and annealing method were investigated. Transmission electron microscopy, X-ray diffraction, and Hall-effect measurements showed that the annealed bulk Si1-xMnx samples were p-type crystalline semiconductors. The photoluminescence spectra for the annealed bulk Si1-xMnx material showed luminescence peaks corresponding to excitons bound to neutral acceptors and related to dislocations due to the existence of Mn impurities. Deep-level transient spectroscopy results for the annealed bulk Si1-xMnx showed deep levels related to the interstitial and substitutial sites of the Mn+ ions. These results can help improve understanding of the optical properties and the deep levels in annealed bulk Si1-xMnx material.

KW - A. Semiconductors

KW - C. Impurities in semiconductor

KW - D. Electronic states

KW - D. Optical properties

UR - https://www.scopus.com/pages/publications/33747812642

U2 - 10.1016/j.ssc.2006.07.032

DO - 10.1016/j.ssc.2006.07.032

M3 - Article

AN - SCOPUS:33747812642

SN - 0038-1098

VL - 140

SP - 14

EP - 17

JO - Solid State Communications

JF - Solid State Communications

IS - 1

ER -

Optical properties and deep levels in annealed Si_1-xMn_x bulk materials

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Keywords

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