Abstract
The p-type InP:Zn was prepared by the liquid encapsulated Czochralski method and subsequently implanted with Mn+ of 5×1015 cm-2 (1 at.%) and 5×1016 cm-2 (10 at.%). The results of energy dispersive X-ray showed that the concentrations of Mn incorporated into InP:Zn is about 1 and 10 at.%. For photoluminescence measurements, the Mn-related optical transitions of the InMnP:Zn samples annealed at 350 {ring operator}C for 60 s and at 450 {ring operator}C for 30 s with Mn (1 at.%) were broadly observed at the energy region around 1.0 eV. The InMnP:Zn samples implanted with Mn (1 at.%) clearly showed ferromagnetic hysteresis loops at 10 K, and the ferromagnetic behavior was observed to persist up to 291 K. Curie temperature (TC) at 291 K has originated from MnP. The InMnP:Zn samples implanted with Mn (10 at.%) were annealed at 350 {ring operator}C for 60 s and at 450 {ring operator}C for 30 s. Using transmittance electron microscopy, both single crystalline and polycrystalline structures containing MnP and InMn3 sized ∼20 nm were observed depending on the annealing condition. These samples exhibited two different Curie temperatures: T C1 at 291 K and another (TC 2) well above 291 K. The high-temperature ferromagnetic behavior up to TC 1 and above TC 2 is believed to have originated from two magnetic MnP and InMn3 phases, respectively.
Original language | English |
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Pages (from-to) | 128-133 |
Number of pages | 6 |
Journal | Solid State Communications |
Volume | 144 |
Issue number | 3-4 |
DOIs | |
State | Published - Oct 2007 |
Keywords
- A. Semiconductors
- C. Crystal structure and symmetry
- D. Optical properties