Optical, structural, and magnetic properties of p-type InMnP:Zn implanted with the Mn (1 and 10 at.%)

Yoon Shon, H. C. Jeon, C. S. Park, H. S. Kim, T. W. Kang, Sejoon Lee, Jin Soak Kim, Eun Kyu Kim, Chong S. Yoon, C. K. Kim, D. J. Fu, X. J. Fan

Research output: Contribution to journalArticlepeer-review

Abstract

The p-type InP:Zn was prepared by the liquid encapsulated Czochralski method and subsequently implanted with Mn+ of 5×1015 cm-2 (1 at.%) and 5×1016 cm-2 (10 at.%). The results of energy dispersive X-ray showed that the concentrations of Mn incorporated into InP:Zn is about 1 and 10 at.%. For photoluminescence measurements, the Mn-related optical transitions of the InMnP:Zn samples annealed at 350 {ring operator}C for 60 s and at 450 {ring operator}C for 30 s with Mn (1 at.%) were broadly observed at the energy region around 1.0 eV. The InMnP:Zn samples implanted with Mn (1 at.%) clearly showed ferromagnetic hysteresis loops at 10 K, and the ferromagnetic behavior was observed to persist up to 291 K. Curie temperature (TC) at 291 K has originated from MnP. The InMnP:Zn samples implanted with Mn (10 at.%) were annealed at 350 {ring operator}C for 60 s and at 450 {ring operator}C for 30 s. Using transmittance electron microscopy, both single crystalline and polycrystalline structures containing MnP and InMn3 sized ∼20 nm were observed depending on the annealing condition. These samples exhibited two different Curie temperatures: T C1 at 291 K and another (TC 2) well above 291 K. The high-temperature ferromagnetic behavior up to TC 1 and above TC 2 is believed to have originated from two magnetic MnP and InMn3 phases, respectively.

Original languageEnglish
Pages (from-to)128-133
Number of pages6
JournalSolid State Communications
Volume144
Issue number3-4
DOIs
StatePublished - Oct 2007

Keywords

  • A. Semiconductors
  • C. Crystal structure and symmetry
  • D. Optical properties

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