TY - JOUR
T1 - Optically and electrically modulated artificial synapses based on MoS2/PZT ferroelectric field-effect transistor for neuromorphic computing system
AU - Chung, Woochan
AU - Kim, Doohyung
AU - Kim, Juri
AU - Park, Jongmin
AU - Kim, Sungjun
AU - Lee, Sejoon
N1 - Publisher Copyright:
© 2024
PY - 2025/5/20
Y1 - 2025/5/20
N2 - To present an advanced device scheme of high-performance optoelectronic synapses, herein, we demonstrated the electrically- and/or optically-drivable multifaceted synaptic capabilities on the 2D semiconductor channel-based ferroelectric field-effect transistor (FeFET) architecture. The device was fabricated in the form of the MoS2/PZT FeFET, and its synaptic weights were effectively controlled by dual stimuli (i.e., both electrical and optical pulses simultaneously) as well as single stimuli (i.e., either electrical or optical pulses alone). This could be attributed to the electrical pulse-tunable strong ferroelectric polarization in PbZrxTi1−xO3 (PZT) as well as the polarization field-enhanced persistent photoconductivity effect in MoS2. Additionally, it was confirmed that the proposed device possesses substantial activity, achieving approximately 95 % pattern recognition accuracy. The results substantiate the great potential of the 2D semiconductor channel-based FeFET device as a high-performance optoelectronic synaptic platform, marking a pivotal stride towards the realization of advanced neuromorphic computing systems.
AB - To present an advanced device scheme of high-performance optoelectronic synapses, herein, we demonstrated the electrically- and/or optically-drivable multifaceted synaptic capabilities on the 2D semiconductor channel-based ferroelectric field-effect transistor (FeFET) architecture. The device was fabricated in the form of the MoS2/PZT FeFET, and its synaptic weights were effectively controlled by dual stimuli (i.e., both electrical and optical pulses simultaneously) as well as single stimuli (i.e., either electrical or optical pulses alone). This could be attributed to the electrical pulse-tunable strong ferroelectric polarization in PbZrxTi1−xO3 (PZT) as well as the polarization field-enhanced persistent photoconductivity effect in MoS2. Additionally, it was confirmed that the proposed device possesses substantial activity, achieving approximately 95 % pattern recognition accuracy. The results substantiate the great potential of the 2D semiconductor channel-based FeFET device as a high-performance optoelectronic synaptic platform, marking a pivotal stride towards the realization of advanced neuromorphic computing systems.
KW - Ferroelectric field-effect transistor
KW - Lead zirconate titanate
KW - Molybdenum disulfide
KW - Neuromorphic computing
KW - Optoelectronic artificial synapse
UR - http://www.scopus.com/inward/record.url?scp=85206624263&partnerID=8YFLogxK
U2 - 10.1016/j.jmst.2024.06.058
DO - 10.1016/j.jmst.2024.06.058
M3 - Article
AN - SCOPUS:85206624263
SN - 1005-0302
VL - 218
SP - 25
EP - 34
JO - Journal of Materials Science and Technology
JF - Journal of Materials Science and Technology
ER -