Optically and electrically modulated artificial synapses based on MoS2/PZT ferroelectric field-effect transistor for neuromorphic computing system

Woochan Chung, Doohyung Kim, Juri Kim, Jongmin Park, Sungjun Kim, Sejoon Lee

Research output: Contribution to journalArticlepeer-review

Abstract

To present an advanced device scheme of high-performance optoelectronic synapses, herein, we demonstrated the electrically- and/or optically-drivable multifaceted synaptic capabilities on the 2D semiconductor channel-based ferroelectric field-effect transistor (FeFET) architecture. The device was fabricated in the form of the MoS2/PZT FeFET, and its synaptic weights were effectively controlled by dual stimuli (i.e., both electrical and optical pulses simultaneously) as well as single stimuli (i.e., either electrical or optical pulses alone). This could be attributed to the electrical pulse-tunable strong ferroelectric polarization in PbZrxTi1−xO3 (PZT) as well as the polarization field-enhanced persistent photoconductivity effect in MoS2. Additionally, it was confirmed that the proposed device possesses substantial activity, achieving approximately 95 % pattern recognition accuracy. The results substantiate the great potential of the 2D semiconductor channel-based FeFET device as a high-performance optoelectronic synaptic platform, marking a pivotal stride towards the realization of advanced neuromorphic computing systems.

Original languageEnglish
Pages (from-to)25-34
Number of pages10
JournalJournal of Materials Science and Technology
Volume218
DOIs
StatePublished - 20 May 2025

Keywords

  • Ferroelectric field-effect transistor
  • Lead zirconate titanate
  • Molybdenum disulfide
  • Neuromorphic computing
  • Optoelectronic artificial synapse

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