@inproceedings{5b350ace31d440a09eedf4834fc29f4b,
title = "Optimization and modeling of npn-type selector for resistive RRAM in cross-point array structure",
abstract = "In this paper, we investigate the characteristics of npn device as a candidate for RRAM selector. npn selector shows high current density and selectivity which are key metrics for the bidirectional select device. We confirm that length and doping concentration of base and emitter region can be varied to optimize the characteristic of the selector. In addition, we observe AC characteristic with 10 ns pulse width and interval. We confirm that I-V curve is well fitted with a combination of exponential and quadratic terms.",
author = "Kim, {Min Hwi} and Sunghun Jung and Sungjun Kim and Seongjae Cho and Lee, {Jong Ho} and Hyungcheol Shin and Park, {Byung Gook}",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; Silicon Nanoelectronics Workshop, SNW 2014 ; Conference date: 08-06-2014 Through 09-06-2014",
year = "2015",
month = dec,
day = "4",
doi = "10.1109/SNW.2014.7348605",
language = "English",
series = "2014 Silicon Nanoelectronics Workshop, SNW 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2014 Silicon Nanoelectronics Workshop, SNW 2014",
address = "United States",
}