Optimization of sub-0.1-μm offset Γ-shaped gate MHEMTs for millimeter-wave applications

Min Han, Myung Sik Son, Jung Hun Oh, Bok Hyung Lee, Mi Ra Kim, Sam Dong Kim, Jin Koo Rhee

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We examine the effects of device scaling in both vertical and lateral dimensions for the metamorphic high electron mobility transistors (MHEMTs) on the DC and millimeter-wave electrical performances by using a hydrodynamic transport model. The well-calibrated hydrodynamic simulation for the sub-0.1-μm offset Γ-gate In0.53Ga0.47As/In 0.52Al0.48As MHEMTs shows a reasonable agreement with the electrical characteristics measured from the fabricated 0.1 μm devices. We have calibrated all the parameters using the measurement data with various physical considerations to take into account the sophisticated carrier transport physics in sub-0.1-μm devices. Being simulated with these calibrated parameters, the optimum device performance is obtained at a source-drain spacing of 2 μm, a gate length of 0.05 μm, a barrier thickness of 10 nm and a channel thickness of 12 nm.

Original languageEnglish
Pages (from-to)973-983
Number of pages11
JournalMicroelectronics Journal
Volume35
Issue number12
DOIs
StatePublished - Dec 2004

Keywords

  • Cut-off frequency
  • GaAs-based HEMT
  • InAlAs
  • InGaAs
  • Maximum frequency of oscillation
  • Metamorphic HEMT (MHEMT)
  • Millimeter-wave frequency
  • Transconductance

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