Optimization of the electrical and optical properties of vanadium doped InZnO thin films

Sera Kwon; Deuk Young Kim; Byung Hyuk Jun; Kwun Bum Chung

doi:10.1063/1.5043371

Optimization of the electrical and optical properties of vanadium doped InZnO thin films

Sera Kwon, Deuk Young Kim, Byung Hyuk Jun, Kwun Bum Chung

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The transparent conducting properties of vanadium-doped indium zinc oxide (VIZO) have been investigated as a function of V doping concentration. The VIZO film demonstrated an average transmittance of above 86% in the visible range, and the sheet resistance showed 10.81 Ω/square with a V doping concentration of 0.18%. In order to verify the applicability as a transparent conductor, the figure of merit was obtained to be 2.07 × 10^-2Ω^-1. The changes of electrical characteristics could be correlated with the changes of the electronic structure, such as the oxidation state and the band edge defect states below the conduction band. By applying the optimal condition, the VIZO film achieved a high workfunction of 5.16 eV.

Original language	English
Article number	121905
Journal	Applied Physics Letters
Volume	113
Issue number	12
DOIs	https://doi.org/10.1063/1.5043371
State	Published - 17 Sep 2018

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title = "Optimization of the electrical and optical properties of vanadium doped InZnO thin films",

abstract = "The transparent conducting properties of vanadium-doped indium zinc oxide (VIZO) have been investigated as a function of V doping concentration. The VIZO film demonstrated an average transmittance of above 86% in the visible range, and the sheet resistance showed 10.81 Ω/square with a V doping concentration of 0.18%. In order to verify the applicability as a transparent conductor, the figure of merit was obtained to be 2.07 × 10-2Ω-1. The changes of electrical characteristics could be correlated with the changes of the electronic structure, such as the oxidation state and the band edge defect states below the conduction band. By applying the optimal condition, the VIZO film achieved a high workfunction of 5.16 eV.",

author = "Sera Kwon and Kim, {Deuk Young} and Jun, {Byung Hyuk} and Chung, {Kwun Bum}",

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AU - Kwon, Sera

AU - Kim, Deuk Young

AU - Jun, Byung Hyuk

AU - Chung, Kwun Bum

PY - 2018/9/17

Y1 - 2018/9/17

N2 - The transparent conducting properties of vanadium-doped indium zinc oxide (VIZO) have been investigated as a function of V doping concentration. The VIZO film demonstrated an average transmittance of above 86% in the visible range, and the sheet resistance showed 10.81 Ω/square with a V doping concentration of 0.18%. In order to verify the applicability as a transparent conductor, the figure of merit was obtained to be 2.07 × 10-2Ω-1. The changes of electrical characteristics could be correlated with the changes of the electronic structure, such as the oxidation state and the band edge defect states below the conduction band. By applying the optimal condition, the VIZO film achieved a high workfunction of 5.16 eV.

AB - The transparent conducting properties of vanadium-doped indium zinc oxide (VIZO) have been investigated as a function of V doping concentration. The VIZO film demonstrated an average transmittance of above 86% in the visible range, and the sheet resistance showed 10.81 Ω/square with a V doping concentration of 0.18%. In order to verify the applicability as a transparent conductor, the figure of merit was obtained to be 2.07 × 10-2Ω-1. The changes of electrical characteristics could be correlated with the changes of the electronic structure, such as the oxidation state and the band edge defect states below the conduction band. By applying the optimal condition, the VIZO film achieved a high workfunction of 5.16 eV.

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JO - Applied Physics Letters

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Optimization of the electrical and optical properties of vanadium doped InZnO thin films

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