Abstract
We employed poly(styrenesulfonate)-doped poly (3,4-ethylenedioxythiophene) (PEDOT:PSS) as a p-layer on textured fluorine-tin-oxide (FTO) glass in pin-type hydrogenated amorphous silicon solar cells (a-Si:H SCs). An amorphous tungsten oxide (WO3) layer and gold nanoparticles (Au-NPs) 10 nm in size were included to prevent the degradation and to increase short-circuit current by the Plasmon effect, respectively, between the PEDOT:PSS and intrinsic-Si layer. The energy band between PEDOT:PSS and WO3 was meaningfully adjusted by Au-NPs. The p-type PEDOT:PSS layer in these organic-inorganic hybrid a-Si:H SCs results in an increased conversion efficiency from ∼2.42 to ∼5.49 and an increased open-circuit voltage from ∼0.29 V to ∼0.56 V. PEDOT:PSS on textured FTO glass is sufficiently showing that it can replace the p-type Si layer in pin-type a-Si:H SCs.
Original language | English |
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Article number | 183902 |
Journal | Applied Physics Letters |
Volume | 102 |
Issue number | 18 |
DOIs | |
State | Published - 6 May 2013 |