Organic thin-film transistors using suspended source/drain electrode structure

Yong Uk Lee, Yong Hoon Kim, Jeong In Han, Min Koo Han

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The electrical properties of triisopropylsilyl (TIPS) pentacene organic thin-film transistors (OTFTs) such as field-effect mobility, on/off ratio, threshold voltage and subthreshold slope were markedly improved by employing suspended source/drain (SSD) electrode structure. The SSD structure was fabricated by using Cr/Au double layer where Cr was used as a sacrificial layer. Using the SSD structure, the field-effect mobility in the linear region increases from 0.007 cm2/Vs to 0.29 cm2/Vs, on/off ratio from 104 to 107, threshold voltage decreases from +9 V to -3 V and subthreshold slope decreases from 4.5 V/decade to 0.6 V/decade.

Original languageEnglish
Title of host publicationOrganic Field-Effect Transistors VI
DOIs
StatePublished - 2007
EventOrganic Field-Effect Transistors VI - San Diego, CA, United States
Duration: 26 Aug 200728 Aug 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6658
ISSN (Print)0277-786X

Conference

ConferenceOrganic Field-Effect Transistors VI
Country/TerritoryUnited States
CitySan Diego, CA
Period26/08/0728/08/07

Keywords

  • Mobility
  • Organic thin film transistor
  • Subthreshold slope
  • Suspended source drain
  • TIPS pentacene
  • Top contact

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