Organic thin-film transistors using suspended source/drain electrode structure

The electrical properties of triisopropylsilyl pentacene organic thin-film transistors such as field-effect mobility, on/off ratio, threshold voltage, and subthreshold slope were markedly improved by employing suspended source/drain (SSD) electrode structure. The SSD structure was fabricated by using CrAu double layer where Cr was used as a sacrificial layer. Using the SSD structure, the field-effect mobility in the linear region increases from 0.007 to 0.29 cm2 V s, on/off ratio from 104 to 107, threshold voltage decreases from +9 to -3 V, and subthreshold slope decreases from 4.5 to 0.6 Vdecade.