Origin of clear ferromagnetism for p-type GaN implanted with Fe+ (5 and 10 at.%)

Yoon Shon; Sejoon Lee; H. C. Jeon; Y. S. Park; D. Y. Kim; T. W. Kang; Jin Soak Kim; Eun Kyu Kim; D. J. Fu; X. J. Fan; Y. J. Park; J. M. Baik; J. L. Lee

doi:10.1063/1.2338000

Origin of clear ferromagnetism for p-type GaN implanted with Fe⁺ (5 and 10 at.%)

Yoon Shon, Sejoon Lee, H. C. Jeon, Y. S. Park, D. Y. Kim, T. W. Kang, Jin Soak Kim, Eun Kyu Kim, D. J. Fu, X. J. Fan, Y. J. Park, J. M. Baik, J. L. Lee

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Abstract

The systematic enhancement of ferromagnetic hysteresis loops for GaN implanted with high doses of Fe (5→ 10 at. %) takes place with an increase in the annealing temperature from 700 to 850°C. The trends of magnetic properties coincide with the results of the increased full width at half maximum of triple axis diffraction for GaN (0002), including the appearance of GaFeN, the enhanced Fe-related photoluminescence transitions, and the systematic increase in sizes of symmetric spin ferromagnetic domains GaFeN in atomic force microscopy and magnetic force microscopy.

Original language	English
Article number	082505
Journal	Applied Physics Letters
Volume	89
Issue number	8
DOIs	https://doi.org/10.1063/1.2338000
State	Published - 2006

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title = "Origin of clear ferromagnetism for p-type GaN implanted with Fe+ (5 and 10 at.%)",

abstract = "The systematic enhancement of ferromagnetic hysteresis loops for GaN implanted with high doses of Fe (5→ 10 at. %) takes place with an increase in the annealing temperature from 700 to 850°C. The trends of magnetic properties coincide with the results of the increased full width at half maximum of triple axis diffraction for GaN (0002), including the appearance of GaFeN, the enhanced Fe-related photoluminescence transitions, and the systematic increase in sizes of symmetric spin ferromagnetic domains GaFeN in atomic force microscopy and magnetic force microscopy.",

author = "Yoon Shon and Sejoon Lee and Jeon, {H. C.} and Park, {Y. S.} and Kim, {D. Y.} and Kang, {T. W.} and Kim, {Jin Soak} and Kim, {Eun Kyu} and Fu, {D. J.} and Fan, {X. J.} and Park, {Y. J.} and Baik, {J. M.} and Lee, {J. L.}",

year = "2006",

doi = "10.1063/1.2338000",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Origin of clear ferromagnetism for p-type GaN implanted with Fe+ (5 and 10 at.%)

AU - Shon, Yoon

AU - Lee, Sejoon

AU - Jeon, H. C.

AU - Park, Y. S.

AU - Kim, D. Y.

AU - Kang, T. W.

AU - Kim, Jin Soak

AU - Kim, Eun Kyu

AU - Fu, D. J.

AU - Fan, X. J.

AU - Park, Y. J.

AU - Baik, J. M.

AU - Lee, J. L.

PY - 2006

Y1 - 2006

N2 - The systematic enhancement of ferromagnetic hysteresis loops for GaN implanted with high doses of Fe (5→ 10 at. %) takes place with an increase in the annealing temperature from 700 to 850°C. The trends of magnetic properties coincide with the results of the increased full width at half maximum of triple axis diffraction for GaN (0002), including the appearance of GaFeN, the enhanced Fe-related photoluminescence transitions, and the systematic increase in sizes of symmetric spin ferromagnetic domains GaFeN in atomic force microscopy and magnetic force microscopy.

AB - The systematic enhancement of ferromagnetic hysteresis loops for GaN implanted with high doses of Fe (5→ 10 at. %) takes place with an increase in the annealing temperature from 700 to 850°C. The trends of magnetic properties coincide with the results of the increased full width at half maximum of triple axis diffraction for GaN (0002), including the appearance of GaFeN, the enhanced Fe-related photoluminescence transitions, and the systematic increase in sizes of symmetric spin ferromagnetic domains GaFeN in atomic force microscopy and magnetic force microscopy.

UR - http://www.scopus.com/inward/record.url?scp=33747851037&partnerID=8YFLogxK

U2 - 10.1063/1.2338000

DO - 10.1063/1.2338000

M3 - Article

AN - SCOPUS:33747851037

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082505

ER -

Origin of clear ferromagnetism for p-type GaN implanted with Fe⁺ (5 and 10 at.%)

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