Abstract
The origin of the critical substrate bias (Vo), which is one of the most important parameters for optimum device design in the variable threshold voltage complementary metal oxide semiconductor (VTCMOS), has been systematically investigated and clarified by means of device simulation. V o is regarded as the substrate bias required to compensate for the degraded drivability in devices with a large body effect factor (γ), by a larger threshold voltage shift (△ Vth). It is found that V o has two components, which compensate for a large S factor and small transconductance, respectively, and depends on the stand-by off-current (I Off,standby) and the supply voltage (Vdd)- It is also found that as the technology advances, Vo will decrease due to the increase of IOff,standby and the reduction of Vdd, indicating that VTCMOS with large γ devices will maintain its advantage in the future.
Original language | English |
---|---|
Pages (from-to) | 2312-2315 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 41 |
Issue number | 4 B |
DOIs | |
State | Published - Apr 2002 |
Keywords
- Body effect factor
- Metal oxide semiconductor field effect transistor (MOSFET)
- Substrate bias
- Variable threshold voltage complementary metal oxide semiconductor (VTCMOS)