Abstract
Poly (3-hexylthiophene)-based TFTs array was fabricated on plastic substrates and O2 plasma treatment effect was investigated. As a gate dielectric, a dual layer structure of polyimide and ion-beam deposited silicon dioxide layer was used. P3HT layer was printed with contact printing and spin coating method and the device characteristics have been analyzed. Based on the experiments, we fabricated TFT device with 0.02 ∼ 0.025 cm2/V·s in saturation carrier mobility and on/off current ratio about 103 ∼ 104.
Original language | English |
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Pages (from-to) | 391-394 |
Number of pages | 4 |
Journal | SID Conference Record of the International Display Research Conference |
State | Published - 2002 |
Event | 22nd International Display Research Conference - Nice, France Duration: 2 Oct 2002 → 4 Oct 2002 |