TY - JOUR
T1 - Oxidation effects on the optical and electrical properties of MoS2 under controlled baking temperatures
AU - Jeong, Takmo
AU - Kim, Jiyoon
AU - Kim, Un Jeong
AU - Ji, Hyunjin
AU - Yun, Seok Joon
N1 - Publisher Copyright:
© 2024 Korean Physical Society
PY - 2025/2
Y1 - 2025/2
N2 - As silicon-based semiconductor technology scales down to the nanoscale, it encounters significant physical limitations, including reduced electron mobility, short-channel effects, and increased heat generation, which hinder device performance and reliability. Two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS2), offer great potential with superior electrical properties at the nanoscale, but the issue of excessive heat generation in highly integrated circuits persists. Therefore, it is essential to investigate the thermal durability of MoS2 under various heating conditions and its impact on physical properties and device performance. In this study, we systematically investigated the oxidation behavior and related physical property variations of CVD-grown MoS2 monolayers by baking them at different temperatures. It was clearly revealed that high-temperature baking induces p-doping and structural deformation, significantly altering optical and electrical properties. Despite the degradation in device performance, reduced interfacial Coulomb scattering was observed, suggesting potential for improved device stability. This study underscores the importance of understanding thermal stability to accelerate the development of 2D semiconductors for next-generation electronic devices.
AB - As silicon-based semiconductor technology scales down to the nanoscale, it encounters significant physical limitations, including reduced electron mobility, short-channel effects, and increased heat generation, which hinder device performance and reliability. Two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS2), offer great potential with superior electrical properties at the nanoscale, but the issue of excessive heat generation in highly integrated circuits persists. Therefore, it is essential to investigate the thermal durability of MoS2 under various heating conditions and its impact on physical properties and device performance. In this study, we systematically investigated the oxidation behavior and related physical property variations of CVD-grown MoS2 monolayers by baking them at different temperatures. It was clearly revealed that high-temperature baking induces p-doping and structural deformation, significantly altering optical and electrical properties. Despite the degradation in device performance, reduced interfacial Coulomb scattering was observed, suggesting potential for improved device stability. This study underscores the importance of understanding thermal stability to accelerate the development of 2D semiconductors for next-generation electronic devices.
UR - http://www.scopus.com/inward/record.url?scp=85209999274&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2024.11.013
DO - 10.1016/j.cap.2024.11.013
M3 - Article
AN - SCOPUS:85209999274
SN - 1567-1739
VL - 70
SP - 61
EP - 68
JO - Current Applied Physics
JF - Current Applied Physics
ER -