Oxide stoichiometry-controlled TaOx-based resistive switching behaviors

Gwang Ho Baek, Ah Rahm Lee, Tae Yoon Kim, Hyun Sik Im, Jin Pyo Hong

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

We examine the influence of variable oxygen concentration in TaOx active layers on the forming process and bipolar resistive switching (BRS) features of TaOx-based resistive switching cells. TaOx active layers prepared using various rf sputtering powers were systematically analyzed to identify the relation between initial compositions and BRS behavior. Proper control of oxygen vacancy concentration was clearly identified as a basic factor in ensuring typical BRS features without affecting the structural properties. We describe the possible origins of both conduction and switching based on the variation of oxygen concentrations initially provided by the growth conditions.

Original languageEnglish
Article number143502
JournalApplied Physics Letters
Volume109
Issue number14
DOIs
StatePublished - 3 Oct 2016

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