Abstract
We describe abnormal dual bipolar resistive switching events in simple Pt/Ta2O5-x/TiOxNy and Pt/Ta 2O5-x/TiN matrices in which the typical switching directions (SD) are initially clockwise (CW). The negative difference region in a high resistance state before reaching the typical "CW set" process enables the SD transition to a counterclockwise direction. It thereby emphasizes the occurrence of a highly stable secondary bipolar resistive switching curve. The origin of two different switching modes is described by adapting a bias-dependent oxygen ion accumulation and depletion process at TiO xNy and TiN electrode interfaces and by performing various structural analyses.
Original language | English |
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Article number | 183510 |
Journal | Applied Physics Letters |
Volume | 103 |
Issue number | 18 |
DOIs | |
State | Published - 28 Oct 2013 |