Oxygen ion drifted bipolar resistive switching behaviors in TiO2-Al electrode interfaces

Young Ho Do; June Sik Kwak; Yoon Cheol Bae; Kyooho Jung; Hyunsik Im; Jin Pyo Hong

doi:10.1016/j.tsf.2010.01.016

Oxygen ion drifted bipolar resistive switching behaviors in TiO₂-Al electrode interfaces

Young Ho Do, June Sik Kwak, Yoon Cheol Bae, Kyooho Jung, Hyunsik Im, Jin Pyo Hong

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

The rutile TiO₂ thin film involving two different top electrodes (Pt and Al) clearly shows the unipolar and bipolar resistive switching transitions which are dependent on the degree of redox properties at TiO₂ layer-electrode interfaces. Detailed current level analysis coupled with Auger electron spectroscopy measurements of the Pt/TiO₂/Pt and Al/TiO₂/Pt structures in the on/off switching states revealed the implication of oxygen ion migration induced chemical reaction at the Al-TiO₂ interfaces. Therefore, it is expected that the bipolar transition nature of resistive switching with an Al electrode is the resulting formation of a thin AlO_x layer due to redox reaction at Al-TiO₂ layer interfaces.

Original language	English
Pages (from-to)	4408-4411
Number of pages	4
Journal	Thin Solid Films
Volume	518
Issue number	15
DOIs	https://doi.org/10.1016/j.tsf.2010.01.016
State	Published - 31 May 2010

Keywords

Auger electron spectroscopy
Current-Voltage Measurements
Electrode interface
Nonvolatile memory
Redox reaction
Titanium dioxide

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10.1016/j.tsf.2010.01.016

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title = "Oxygen ion drifted bipolar resistive switching behaviors in TiO2-Al electrode interfaces",

abstract = "The rutile TiO2 thin film involving two different top electrodes (Pt and Al) clearly shows the unipolar and bipolar resistive switching transitions which are dependent on the degree of redox properties at TiO2 layer-electrode interfaces. Detailed current level analysis coupled with Auger electron spectroscopy measurements of the Pt/TiO2/Pt and Al/TiO2/Pt structures in the on/off switching states revealed the implication of oxygen ion migration induced chemical reaction at the Al-TiO2 interfaces. Therefore, it is expected that the bipolar transition nature of resistive switching with an Al electrode is the resulting formation of a thin AlOx layer due to redox reaction at Al-TiO2 layer interfaces.",

keywords = "Auger electron spectroscopy, Current-Voltage Measurements, Electrode interface, Nonvolatile memory, Redox reaction, Titanium dioxide",

author = "Do, {Young Ho} and Kwak, {June Sik} and Bae, {Yoon Cheol} and Kyooho Jung and Hyunsik Im and Hong, {Jin Pyo}",

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T1 - Oxygen ion drifted bipolar resistive switching behaviors in TiO2-Al electrode interfaces

AU - Do, Young Ho

AU - Kwak, June Sik

AU - Bae, Yoon Cheol

AU - Jung, Kyooho

AU - Im, Hyunsik

AU - Hong, Jin Pyo

PY - 2010/5/31

Y1 - 2010/5/31

N2 - The rutile TiO2 thin film involving two different top electrodes (Pt and Al) clearly shows the unipolar and bipolar resistive switching transitions which are dependent on the degree of redox properties at TiO2 layer-electrode interfaces. Detailed current level analysis coupled with Auger electron spectroscopy measurements of the Pt/TiO2/Pt and Al/TiO2/Pt structures in the on/off switching states revealed the implication of oxygen ion migration induced chemical reaction at the Al-TiO2 interfaces. Therefore, it is expected that the bipolar transition nature of resistive switching with an Al electrode is the resulting formation of a thin AlOx layer due to redox reaction at Al-TiO2 layer interfaces.

AB - The rutile TiO2 thin film involving two different top electrodes (Pt and Al) clearly shows the unipolar and bipolar resistive switching transitions which are dependent on the degree of redox properties at TiO2 layer-electrode interfaces. Detailed current level analysis coupled with Auger electron spectroscopy measurements of the Pt/TiO2/Pt and Al/TiO2/Pt structures in the on/off switching states revealed the implication of oxygen ion migration induced chemical reaction at the Al-TiO2 interfaces. Therefore, it is expected that the bipolar transition nature of resistive switching with an Al electrode is the resulting formation of a thin AlOx layer due to redox reaction at Al-TiO2 layer interfaces.

KW - Auger electron spectroscopy

KW - Current-Voltage Measurements

KW - Electrode interface

KW - Nonvolatile memory

KW - Redox reaction

KW - Titanium dioxide

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M3 - Article

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Oxygen ion drifted bipolar resistive switching behaviors in TiO₂-Al electrode interfaces

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