P-19: Effect of back channel passivation on the operation stability of solution-processed transparent oxide tfts and ring oscillators

Yong Hoon Kim; Min Suk Oh; Kwang Ho Kim; Hyun Jae Kim; Jeong In Han; Sung Kyu Park

doi:10.1889/1.3621033

P-19: Effect of back channel passivation on the operation stability of solution-processed transparent oxide tfts and ring oscillators

Yong Hoon Kim, Min Suk Oh, Kwang Ho Kim, Hyun Jae Kim, Jeong In Han, Sung Kyu Park

Department of Chemical and Biochemical Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this paper, the effects of back channel passivation on the electrical stability of solution-processed zinc-tin-oxide thin-film transistors (ZTO TFTs) and ring oscillators have been investigated. Based on solution-processed ZTO TFTs, ring oscillators with an oscillation frequency up to 769 kHz were realized and it was found that the passivation layer had a strong influence on the operation stability of the ring oscillators.

Original language	English
Pages (from-to)	1166-1169
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	42 1
DOIs	https://doi.org/10.1889/1.3621033
State	Published - Jun 2011

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title = "P-19: Effect of back channel passivation on the operation stability of solution-processed transparent oxide tfts and ring oscillators",

abstract = "In this paper, the effects of back channel passivation on the electrical stability of solution-processed zinc-tin-oxide thin-film transistors (ZTO TFTs) and ring oscillators have been investigated. Based on solution-processed ZTO TFTs, ring oscillators with an oscillation frequency up to 769 kHz were realized and it was found that the passivation layer had a strong influence on the operation stability of the ring oscillators.",

author = "Kim, {Yong Hoon} and Oh, {Min Suk} and Kim, {Kwang Ho} and Kim, {Hyun Jae} and Han, {Jeong In} and Park, {Sung Kyu}",

year = "2011",

month = jun,

doi = "10.1889/1.3621033",

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pages = "1166--1169",

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T2 - Effect of back channel passivation on the operation stability of solution-processed transparent oxide tfts and ring oscillators

AU - Kim, Yong Hoon

AU - Oh, Min Suk

AU - Kim, Kwang Ho

AU - Kim, Hyun Jae

AU - Han, Jeong In

AU - Park, Sung Kyu

PY - 2011/6

Y1 - 2011/6

N2 - In this paper, the effects of back channel passivation on the electrical stability of solution-processed zinc-tin-oxide thin-film transistors (ZTO TFTs) and ring oscillators have been investigated. Based on solution-processed ZTO TFTs, ring oscillators with an oscillation frequency up to 769 kHz were realized and it was found that the passivation layer had a strong influence on the operation stability of the ring oscillators.

AB - In this paper, the effects of back channel passivation on the electrical stability of solution-processed zinc-tin-oxide thin-film transistors (ZTO TFTs) and ring oscillators have been investigated. Based on solution-processed ZTO TFTs, ring oscillators with an oscillation frequency up to 769 kHz were realized and it was found that the passivation layer had a strong influence on the operation stability of the ring oscillators.

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DO - 10.1889/1.3621033

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JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

ER -

P-19: Effect of back channel passivation on the operation stability of solution-processed transparent oxide tfts and ring oscillators

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