@inproceedings{d2f543e3090448ecb6ac7288f8acd451,
title = "Paramagnetic defects and charge trapping in TaYOx gate dielectrics on strained-Si",
abstract = "Charge trapping kinetics and chemical nature of defects present in AlffaYOx/strained-SilSio.sGeo.2 MIS capacitors have been studied using internal photoemission and magnetic resonance. Reliability characteristics have been studied using CVS and CCS techniques. Results of electron paramagnetic resonance (EPR) and internal photoemission (IPE) studies on the charge trapping behavior are reported.",
author = "B. Majhi and C. Mahata and Bera, {M. K.} and Rotal, {M. K.} and S. Mallik and T. Dasl and Maitil, {C. K.}",
year = "2009",
doi = "10.1109/IPFA.2009.5232718",
language = "English",
isbn = "9781424439102",
series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
pages = "811--814",
booktitle = "Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009",
note = "2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 ; Conference date: 06-07-2009 Through 10-07-2009",
}