Paramagnetic defects and charge trapping in TaYOx gate dielectrics on strained-Si

B. Majhi, C. Mahata, M. K. Bera, M. K. Rotal, S. Mallik, T. Dasl, C. K. Maitil

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Charge trapping kinetics and chemical nature of defects present in AlffaYOx/strained-SilSio.sGeo.2 MIS capacitors have been studied using internal photoemission and magnetic resonance. Reliability characteristics have been studied using CVS and CCS techniques. Results of electron paramagnetic resonance (EPR) and internal photoemission (IPE) studies on the charge trapping behavior are reported.

Original languageEnglish
Title of host publicationProceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
Pages811-814
Number of pages4
DOIs
StatePublished - 2009
Event2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 - Suzhou, China
Duration: 6 Jul 200910 Jul 2009

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
Country/TerritoryChina
CitySuzhou
Period6/07/0910/07/09

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