Passivation of interfacial states for GaAs- and InGaAs/inp-based regrown nanostructures

M. K. Rathi, G. Tsvid, A. A. Khandekar, J. C. Shin, D. Botez, T. F. Kuech

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The interfacial charge density of regrown structures was studied for several different material systems: GaAs, InGaAs/InP, and InAlAs-InGaAs superlattice structures on InP. The particular application of interest is in the fabrication of nanoscale devices. Such structures require a very low density of interfacial charge at their exposed surfaces in order to avoid Fermi-level pinning and subsequent lateral carrier depletion across the structure. (110)-Oriented samples, mimicking the exposed sidewalls of nano-etched structures, were plasma-etched using a variety of gas-phase chemistries. The interfacial charge density at regrown interfaces was studied using capacitance-voltage (CV) and electrochemical CV techniques after in situ and ex situ pretreatments and epitaxial regrowth. The minimum interfacial charge densities obtained for these material systems were <10 11 cm -2. Preferential regrowth around etched nanopillars was demonstrated for InP-based structures.

Original languageEnglish
Pages (from-to)2023-2032
Number of pages10
JournalJournal of Electronic Materials
Volume38
Issue number10
DOIs
StatePublished - Oct 2009

Keywords

  • In situ preparation
  • Interfacial states
  • Surfaces and interfaces

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