Abstract
The interfacial charge density of regrown structures was studied for several different material systems: GaAs, InGaAs/InP, and InAlAs-InGaAs superlattice structures on InP. The particular application of interest is in the fabrication of nanoscale devices. Such structures require a very low density of interfacial charge at their exposed surfaces in order to avoid Fermi-level pinning and subsequent lateral carrier depletion across the structure. (110)-Oriented samples, mimicking the exposed sidewalls of nano-etched structures, were plasma-etched using a variety of gas-phase chemistries. The interfacial charge density at regrown interfaces was studied using capacitance-voltage (CV) and electrochemical CV techniques after in situ and ex situ pretreatments and epitaxial regrowth. The minimum interfacial charge densities obtained for these material systems were <10 11 cm -2. Preferential regrowth around etched nanopillars was demonstrated for InP-based structures.
Original language | English |
---|---|
Pages (from-to) | 2023-2032 |
Number of pages | 10 |
Journal | Journal of Electronic Materials |
Volume | 38 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2009 |
Keywords
- In situ preparation
- Interfacial states
- Surfaces and interfaces