Performance Analysis and Read Voltage Optimization of E-Beam Evaporated Amorphous SnO₂-Based Cross-Cell Resistive Switching Device

In this article, we have investigated the diffusivity of platinum (Pt) and silver (Ag) metal into an E-beam evaporated amorphous tin-oxide (SnO2) insulating layer and studied resistive switching (RS) dynamics of the cross-cell structured tin-oxide-based memristor using Pt and Ag metal electrodes. We have observed that the fabricated memristive device has shown forming-free bipolar RS (BRS) dynamics. The electrical response of fabricated BRS device has been studied by Keithley-4200 parametric analyzer with customized probe station by applying low sweeping voltage (-1/1 V) at room temperature (RT). We have also described the impact of read voltage (0.1, 0.2, 0.3, 0.4, 0.5, and 0.6 V) over cyclic (50 cycles) and pulsative (20k pulses) endurance along with the importance of read voltage optimization for fabricated BRS device in memory applications. The proposed BRS device has shown ∼70 switching windows (SWs) at an optimized read voltage (0.3 V) for 20k times of read/write operation without any considerable degradation, and we have also discussed the relevance of pulsative and cyclic endurance. Finally, we have examined the data retention property of the proposed RS device for 105 s at 85 °C on optimized read voltage (0.3 V).