Performance enhancement of p-type SnO semiconductors via SiOx passivation

Song Yi Ahn, Seong Cheol Jang, Aeran Song, Kwun Bum Chung, Yong Joo Kim, Hyun Suk Kim

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

In this paper, the effects of sputter-deposited silicon oxide (SiOx) passivation on p-type tin monoxide (SnO) semiconductor are investigated. X-ray photoelectron spectroscopy analyses indicate that the relative oxygen content decreases when a SiOx passivation layer is applied, thus inducing an oxygen deficient stoichiometry which promotes the delocalization of the valence band, thus improving hole transport. As a result, SnO thin-film transistors (TFTs) with a SiOx protective layer exhibit much higher field-effect mobility of 1.40 cm2/Vs compared to devices without passivation (6.23 × 10−2 cm2/Vs).

Original languageEnglish
Article number101747
JournalMaterials Today Communications
Volume26
DOIs
StatePublished - Mar 2021

Keywords

  • Field-effect mobility
  • p-type SnO
  • SiO Passivation layer
  • Thin-film transistors

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