Abstract
In this paper, the effects of sputter-deposited silicon oxide (SiOx) passivation on p-type tin monoxide (SnO) semiconductor are investigated. X-ray photoelectron spectroscopy analyses indicate that the relative oxygen content decreases when a SiOx passivation layer is applied, thus inducing an oxygen deficient stoichiometry which promotes the delocalization of the valence band, thus improving hole transport. As a result, SnO thin-film transistors (TFTs) with a SiOx protective layer exhibit much higher field-effect mobility of 1.40 cm2/Vs compared to devices without passivation (6.23 × 10−2 cm2/Vs).
Original language | English |
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Article number | 101747 |
Journal | Materials Today Communications |
Volume | 26 |
DOIs | |
State | Published - Mar 2021 |
Keywords
- Field-effect mobility
- p-type SnO
- SiO Passivation layer
- Thin-film transistors