Abstract
Potential of high-k dielectric films for future scaled charge storage non-volatile memory (NVM) device applications is discussed. To overcome the problems of charge loss encountered in conventional flash memories with silicon-nitride (Si3N4) films and polysilicon-oxide-nitride-oxide-silicon (SONOS) and nonuniformity issues in nanocrystal memories (NC), such as Si, Ge and metal, it is shown that the use of high-k dielectrics allows more aggressive scaling of the tunnel dielectric, smaller operating voltage, better endurance, and faster program/erase speeds. Charge-trapping characteristics of high-k AlN films with SiO2 as a blocking oxide in p-Si/SiO2/AlN/SiO2/poly-silicon (SOHOS) memory structures have been investigated in detail. The experimental results of program/erase characteristics obtained as the functions of gate bias voltage and pulse width are presented.
Original language | English |
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Pages (from-to) | 299-302 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 86 |
Issue number | 3 |
DOIs | |
State | Published - Mar 2009 |
Keywords
- AlN
- High-k dielectric
- Pulse
- Threshold voltage shift