Performance improvement of flash memory using AlN as charge-trapping Layer

P. Chakraborty, S. S. Mahato, T. K. Maiti, M. K. Bera, C. Mahata, S. K. Samanta, A. Biswas, C. K. Maiti

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

Potential of high-k dielectric films for future scaled charge storage non-volatile memory (NVM) device applications is discussed. To overcome the problems of charge loss encountered in conventional flash memories with silicon-nitride (Si3N4) films and polysilicon-oxide-nitride-oxide-silicon (SONOS) and nonuniformity issues in nanocrystal memories (NC), such as Si, Ge and metal, it is shown that the use of high-k dielectrics allows more aggressive scaling of the tunnel dielectric, smaller operating voltage, better endurance, and faster program/erase speeds. Charge-trapping characteristics of high-k AlN films with SiO2 as a blocking oxide in p-Si/SiO2/AlN/SiO2/poly-silicon (SOHOS) memory structures have been investigated in detail. The experimental results of program/erase characteristics obtained as the functions of gate bias voltage and pulse width are presented.

Original languageEnglish
Pages (from-to)299-302
Number of pages4
JournalMicroelectronic Engineering
Volume86
Issue number3
DOIs
StatePublished - Mar 2009

Keywords

  • AlN
  • High-k dielectric
  • Pulse
  • Threshold voltage shift

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