Performance improvement of flash memory using AlN as charge-trapping Layer

P. Chakraborty; S. S. Mahato; T. K. Maiti; M. K. Bera; C. Mahata; S. K. Samanta; A. Biswas; C. K. Maiti

doi:10.1016/j.mee.2008.10.008

Performance improvement of flash memory using AlN as charge-trapping Layer

P. Chakraborty
, S. S. Mahato
, T. K. Maiti
, M. K. Bera
, C. Mahata
, S. K. Samanta
, A. Biswas
, C. K. Maiti

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Potential of high-k dielectric films for future scaled charge storage non-volatile memory (NVM) device applications is discussed. To overcome the problems of charge loss encountered in conventional flash memories with silicon-nitride (Si₃N₄) films and polysilicon-oxide-nitride-oxide-silicon (SONOS) and nonuniformity issues in nanocrystal memories (NC), such as Si, Ge and metal, it is shown that the use of high-k dielectrics allows more aggressive scaling of the tunnel dielectric, smaller operating voltage, better endurance, and faster program/erase speeds. Charge-trapping characteristics of high-k AlN films with SiO₂ as a blocking oxide in p-Si/SiO₂/AlN/SiO₂/poly-silicon (SOHOS) memory structures have been investigated in detail. The experimental results of program/erase characteristics obtained as the functions of gate bias voltage and pulse width are presented.

Original language	English
Pages (from-to)	299-302
Number of pages	4
Journal	Microelectronic Engineering
Volume	86
Issue number	3
DOIs	https://doi.org/10.1016/j.mee.2008.10.008
State	Published - Mar 2009

Keywords

AlN
High-k dielectric
Pulse
Threshold voltage shift

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10.1016/j.mee.2008.10.008

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@article{64e21ce20679433b85743df0103b985d,

title = "Performance improvement of flash memory using AlN as charge-trapping Layer",

abstract = "Potential of high-k dielectric films for future scaled charge storage non-volatile memory (NVM) device applications is discussed. To overcome the problems of charge loss encountered in conventional flash memories with silicon-nitride (Si3N4) films and polysilicon-oxide-nitride-oxide-silicon (SONOS) and nonuniformity issues in nanocrystal memories (NC), such as Si, Ge and metal, it is shown that the use of high-k dielectrics allows more aggressive scaling of the tunnel dielectric, smaller operating voltage, better endurance, and faster program/erase speeds. Charge-trapping characteristics of high-k AlN films with SiO2 as a blocking oxide in p-Si/SiO2/AlN/SiO2/poly-silicon (SOHOS) memory structures have been investigated in detail. The experimental results of program/erase characteristics obtained as the functions of gate bias voltage and pulse width are presented.",

keywords = "AlN, High-k dielectric, Pulse, Threshold voltage shift",

author = "P. Chakraborty and Mahato, \{S. S.\} and Maiti, \{T. K.\} and Bera, \{M. K.\} and C. Mahata and Samanta, \{S. K.\} and A. Biswas and Maiti, \{C. K.\}",

year = "2009",

month = mar,

doi = "10.1016/j.mee.2008.10.008",

language = "English",

volume = "86",

pages = "299--302",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "3",

}

TY - JOUR

T1 - Performance improvement of flash memory using AlN as charge-trapping Layer

AU - Chakraborty, P.

AU - Mahato, S. S.

AU - Maiti, T. K.

AU - Bera, M. K.

AU - Mahata, C.

AU - Samanta, S. K.

AU - Biswas, A.

AU - Maiti, C. K.

PY - 2009/3

Y1 - 2009/3

N2 - Potential of high-k dielectric films for future scaled charge storage non-volatile memory (NVM) device applications is discussed. To overcome the problems of charge loss encountered in conventional flash memories with silicon-nitride (Si3N4) films and polysilicon-oxide-nitride-oxide-silicon (SONOS) and nonuniformity issues in nanocrystal memories (NC), such as Si, Ge and metal, it is shown that the use of high-k dielectrics allows more aggressive scaling of the tunnel dielectric, smaller operating voltage, better endurance, and faster program/erase speeds. Charge-trapping characteristics of high-k AlN films with SiO2 as a blocking oxide in p-Si/SiO2/AlN/SiO2/poly-silicon (SOHOS) memory structures have been investigated in detail. The experimental results of program/erase characteristics obtained as the functions of gate bias voltage and pulse width are presented.

AB - Potential of high-k dielectric films for future scaled charge storage non-volatile memory (NVM) device applications is discussed. To overcome the problems of charge loss encountered in conventional flash memories with silicon-nitride (Si3N4) films and polysilicon-oxide-nitride-oxide-silicon (SONOS) and nonuniformity issues in nanocrystal memories (NC), such as Si, Ge and metal, it is shown that the use of high-k dielectrics allows more aggressive scaling of the tunnel dielectric, smaller operating voltage, better endurance, and faster program/erase speeds. Charge-trapping characteristics of high-k AlN films with SiO2 as a blocking oxide in p-Si/SiO2/AlN/SiO2/poly-silicon (SOHOS) memory structures have been investigated in detail. The experimental results of program/erase characteristics obtained as the functions of gate bias voltage and pulse width are presented.

KW - AlN

KW - High-k dielectric

KW - Pulse

KW - Threshold voltage shift

UR - https://www.scopus.com/pages/publications/59049093079

U2 - 10.1016/j.mee.2008.10.008

DO - 10.1016/j.mee.2008.10.008

M3 - Article

AN - SCOPUS:59049093079

SN - 0167-9317

VL - 86

SP - 299

EP - 302

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 3

ER -

Performance improvement of flash memory using AlN as charge-trapping Layer

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Keywords

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