Performance of low-operating voltage P3HT-based thin-film transistors with anodized Ta 2O 5 insulator

Jae Yong Seong, Kwan Soo Chung, Sung Kwan Kwak, Yong Hoon Kim, Dae Gyu Moon, Jeong In Han, Won Keun Kim

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4 Scopus citations

Abstract

Polymer thin-film transistors (TFTs) that use Ta 2O 5 gate insulator were fabricated on plastic substrates. The Ta 2O 5 gate insulator was prepared by anodizing a Ta gate electrode. Ta 2O 5 has a much larger relative dielectric constant (ε = 20 ∼ 28) compared with conventional gate insulators, and it enables the polymer TFTs to operate at a lower voltage than previous devices. Poly-3-hexylthiophene (P3HT) was used as semiconducting material in the transistors. P3HT deposited by the micro-contact printing process, which uses a silicon elastomer stamp, enables the patterning of polymer layers without any photo-engraving process (PEP). The polymer FETs exhibited a field-effect mobility of 8.1 ± 0.5 cm 2/V·S and a current on/off ratio of 10 2 ∼ 10 3. Furthermore, in this paper, we discuss the properties of the dielectric material as well as the P3HT-based organic transistors with a Ta 2O 5 gate insulator.

Original languageEnglish
Pages (from-to)S914-S916
JournalJournal of the Korean Physical Society
Volume45
Issue numberSUPPL.
StatePublished - Dec 2004

Keywords

  • P3HT
  • Polymer TFTs
  • Ta o
  • Thin-film transistors

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