Photo and thermal stability enhancement of amorphous Hf-In-Zn-O thin-film transistors by the modulation of back channel composition

W. J. Maeng; Joon Seok Park; Hyun Suk Kim; Kwang Hee Lee; Kyung Bae Park; Kyoung Seok Son; Tae Sang Kim; Eok Su Kim; Yong Nam Ham; Myungkwan Ryu; Sang Yoon Lee

doi:10.1063/1.3555446

Photo and thermal stability enhancement of amorphous Hf-In-Zn-O thin-film transistors by the modulation of back channel composition

W. J. Maeng, Joon Seok Park, Hyun Suk Kim, Kwang Hee Lee, Kyung Bae Park, Kyoung Seok Son, Tae Sang Kim, Eok Su Kim, Yong Nam Ham, Myungkwan Ryu, Sang Yoon Lee

Department of Energy and Materials Engineering

Samsung

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The sensitivity and stability of amorphous Hf-In-Zn-O thin-film transistors with respect to visible light radiation and thermal annealing were studied. The photo and thermal stability of the devices were significantly improved by the application of a double active layer that consists of a low conductivity back channel with reduced indium content. From this double layer, significantly lower shifts in V_{turn on} upon illumination and thermal annealing could be achieved. However, no degradation in the field-effect mobility and reliability of the devices was observed.

Original language	English
Article number	073503
Journal	Applied Physics Letters
Volume	98
Issue number	7
DOIs	https://doi.org/10.1063/1.3555446
State	Published - 14 Feb 2011

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title = "Photo and thermal stability enhancement of amorphous Hf-In-Zn-O thin-film transistors by the modulation of back channel composition",

abstract = "The sensitivity and stability of amorphous Hf-In-Zn-O thin-film transistors with respect to visible light radiation and thermal annealing were studied. The photo and thermal stability of the devices were significantly improved by the application of a double active layer that consists of a low conductivity back channel with reduced indium content. From this double layer, significantly lower shifts in Vturn on upon illumination and thermal annealing could be achieved. However, no degradation in the field-effect mobility and reliability of the devices was observed.",

author = "Maeng, {W. J.} and Park, {Joon Seok} and Kim, {Hyun Suk} and Lee, {Kwang Hee} and Park, {Kyung Bae} and Son, {Kyoung Seok} and Kim, {Tae Sang} and Kim, {Eok Su} and Ham, {Yong Nam} and Myungkwan Ryu and Lee, {Sang Yoon}",

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AU - Maeng, W. J.

AU - Park, Joon Seok

AU - Kim, Hyun Suk

AU - Lee, Kwang Hee

AU - Park, Kyung Bae

AU - Son, Kyoung Seok

AU - Kim, Tae Sang

AU - Kim, Eok Su

AU - Ham, Yong Nam

AU - Ryu, Myungkwan

AU - Lee, Sang Yoon

PY - 2011/2/14

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AB - The sensitivity and stability of amorphous Hf-In-Zn-O thin-film transistors with respect to visible light radiation and thermal annealing were studied. The photo and thermal stability of the devices were significantly improved by the application of a double active layer that consists of a low conductivity back channel with reduced indium content. From this double layer, significantly lower shifts in Vturn on upon illumination and thermal annealing could be achieved. However, no degradation in the field-effect mobility and reliability of the devices was observed.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Photo and thermal stability enhancement of amorphous Hf-In-Zn-O thin-film transistors by the modulation of back channel composition

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