Abstract
We have investigated the photocurrent spectra of lateral conduction self-assembled Ge/Si quantum dots (QDs) infrared photodetector structure. We have observed a broad mid-infrared photocurrent spectrum in photon energy range of 120-400 meV (λ∼3-10 μm) due to bound-to-bound as well as bound-to-continuum intersubband transition of normal incidence radiation in the valence band of self-assembled Ge QDs and subsequent lateral transport of photoexcited carriers in the Si/SiGe two-dimensional channel. The peak responsivity was as high as 134 mA/W at photon energy of 240 meV (λ∼5.2 μm) at T=10 K and Vb=8 V. Furthermore, the electronic states in valence band of Ge QD were clarified by using several optical measurements.
Original language | English |
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Article number | 27 |
Pages (from-to) | 146-152 |
Number of pages | 7 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 5726 |
DOIs | |
State | Published - 2005 |
Event | Semiconductor Photodetectors II - San Jose, CA, United States Duration: 25 Jan 2005 → 26 Jan 2005 |