Photoconductivity in lateral conduction self-assembled Ge/Si quantum dot infrared photodetectors

S. W. Lee, C. J. Park, T. W. Kang, H. Y. Cho, K. Hirakawa

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

We have investigated the photocurrent spectra of lateral conduction self-assembled Ge/Si quantum dots (QDs) infrared photodetector structure. We have observed a broad mid-infrared photocurrent spectrum in photon energy range of 120-400 meV (λ∼3-10 μm) due to bound-to-bound as well as bound-to-continuum intersubband transition of normal incidence radiation in the valence band of self-assembled Ge QDs and subsequent lateral transport of photoexcited carriers in the Si/SiGe two-dimensional channel. The peak responsivity was as high as 134 mA/W at photon energy of 240 meV (λ∼5.2 μm) at T=10 K and Vb=8 V. Furthermore, the electronic states in valence band of Ge QD were clarified by using several optical measurements.

Original languageEnglish
Article number27
Pages (from-to)146-152
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5726
DOIs
StatePublished - 2005
EventSemiconductor Photodetectors II - San Jose, CA, United States
Duration: 25 Jan 200526 Jan 2005

Fingerprint

Dive into the research topics of 'Photoconductivity in lateral conduction self-assembled Ge/Si quantum dot infrared photodetectors'. Together they form a unique fingerprint.

Cite this