Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures

W. C. Yang, B. J. Rodriauez, M. Park, R. J. Nemanich, O. Ambacher, V. Cimalla

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

The inversion domain boundaries of GaN-based lateral polarity heterostructures were observed using photoelectron emission microscopy. It was shown that the emission threshold of the N-face region is lower than that of the Ga face. Bright emission was detected from regions around the inversion domain boundaries of the lateral polarity heterostructure.

Original languageEnglish
Pages (from-to)5720-5725
Number of pages6
JournalJournal of Applied Physics
Volume94
Issue number9
DOIs
StatePublished - 1 Nov 2003

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