Abstract
The inversion domain boundaries of GaN-based lateral polarity heterostructures were observed using photoelectron emission microscopy. It was shown that the emission threshold of the N-face region is lower than that of the Ga face. Bright emission was detected from regions around the inversion domain boundaries of the lateral polarity heterostructure.
Original language | English |
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Pages (from-to) | 5720-5725 |
Number of pages | 6 |
Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 9 |
DOIs | |
State | Published - 1 Nov 2003 |