Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures

W. C. Yang; B. J. Rodriauez; M. Park; R. J. Nemanich; O. Ambacher; V. Cimalla

doi:10.1063/1.1618355

Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures

W. C. Yang
, B. J. Rodriauez
, M. Park
, R. J. Nemanich
, O. Ambacher
, V. Cimalla

Department of Physics

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

The inversion domain boundaries of GaN-based lateral polarity heterostructures were observed using photoelectron emission microscopy. It was shown that the emission threshold of the N-face region is lower than that of the Ga face. Bright emission was detected from regions around the inversion domain boundaries of the lateral polarity heterostructure.

Original language	English
Pages (from-to)	5720-5725
Number of pages	6
Journal	Journal of Applied Physics
Volume	94
Issue number	9
DOIs	https://doi.org/10.1063/1.1618355
State	Published - 1 Nov 2003

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@article{2498246f26194361b147ca3d9953e80f,

title = "Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures",

abstract = "The inversion domain boundaries of GaN-based lateral polarity heterostructures were observed using photoelectron emission microscopy. It was shown that the emission threshold of the N-face region is lower than that of the Ga face. Bright emission was detected from regions around the inversion domain boundaries of the lateral polarity heterostructure.",

author = "Yang, \{W. C.\} and Rodriauez, \{B. J.\} and M. Park and Nemanich, \{R. J.\} and O. Ambacher and V. Cimalla",

year = "2003",

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doi = "10.1063/1.1618355",

language = "English",

volume = "94",

pages = "5720--5725",

journal = "Journal of Applied Physics",

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T1 - Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures

AU - Yang, W. C.

AU - Rodriauez, B. J.

AU - Park, M.

AU - Nemanich, R. J.

AU - Ambacher, O.

AU - Cimalla, V.

PY - 2003/11/1

Y1 - 2003/11/1

N2 - The inversion domain boundaries of GaN-based lateral polarity heterostructures were observed using photoelectron emission microscopy. It was shown that the emission threshold of the N-face region is lower than that of the Ga face. Bright emission was detected from regions around the inversion domain boundaries of the lateral polarity heterostructure.

AB - The inversion domain boundaries of GaN-based lateral polarity heterostructures were observed using photoelectron emission microscopy. It was shown that the emission threshold of the N-face region is lower than that of the Ga face. Bright emission was detected from regions around the inversion domain boundaries of the lateral polarity heterostructure.

UR - https://www.scopus.com/pages/publications/0242721155

U2 - 10.1063/1.1618355

DO - 10.1063/1.1618355

M3 - Article

AN - SCOPUS:0242721155

SN - 0021-8979

VL - 94

SP - 5720

EP - 5725

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures

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