Photon energy dependence of contrast in photoelectron emission microscopy of Si devices

V. W. Ballarotto; K. Siegrist; R. J. Phaneuf; E. D. Williams; W. C. Yang; R. J. Nemanich

doi:10.1063/1.1376151

Photon energy dependence of contrast in photoelectron emission microscopy of Si devices

V. W. Ballarotto, K. Siegrist, R. J. Phaneuf, E. D. Williams, W. C. Yang, R. J. Nemanich

Department of Physics

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12 Scopus citations

Abstract

We investigate the variation in doping-induced contrast with photon energy in photoelectron emission microscopy images of Si pn devices using a free-electron laser as a tunable monochromatic light source. Photoyield is observed from p-doped regions of the devices for photon energies as low as 4.5 eV. Band tailing is the dominant effect contributing to the low energy photoyield from the heavily doped p regions. The low intensity tail from the n regions, however, may be from surface states.

Original language	English
Pages (from-to)	3547-3549
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	22
DOIs	https://doi.org/10.1063/1.1376151
State	Published - 28 May 2001

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abstract = "We investigate the variation in doping-induced contrast with photon energy in photoelectron emission microscopy images of Si pn devices using a free-electron laser as a tunable monochromatic light source. Photoyield is observed from p-doped regions of the devices for photon energies as low as 4.5 eV. Band tailing is the dominant effect contributing to the low energy photoyield from the heavily doped p regions. The low intensity tail from the n regions, however, may be from surface states.",

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AU - Ballarotto, V. W.

AU - Siegrist, K.

AU - Phaneuf, R. J.

AU - Williams, E. D.

AU - Yang, W. C.

AU - Nemanich, R. J.

PY - 2001/5/28

Y1 - 2001/5/28

N2 - We investigate the variation in doping-induced contrast with photon energy in photoelectron emission microscopy images of Si pn devices using a free-electron laser as a tunable monochromatic light source. Photoyield is observed from p-doped regions of the devices for photon energies as low as 4.5 eV. Band tailing is the dominant effect contributing to the low energy photoyield from the heavily doped p regions. The low intensity tail from the n regions, however, may be from surface states.

AB - We investigate the variation in doping-induced contrast with photon energy in photoelectron emission microscopy images of Si pn devices using a free-electron laser as a tunable monochromatic light source. Photoyield is observed from p-doped regions of the devices for photon energies as low as 4.5 eV. Band tailing is the dominant effect contributing to the low energy photoyield from the heavily doped p regions. The low intensity tail from the n regions, however, may be from surface states.

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ER -

Photon energy dependence of contrast in photoelectron emission microscopy of Si devices

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