Photon energy dependence of contrast in photoelectron emission microscopy of Si devices

V. W. Ballarotto; K. Siegrist; R. J. Phaneuf; E. D. Williams; W. C. Yang; R. J. Nemanich

doi:10.1063/1.1376151

Photon energy dependence of contrast in photoelectron emission microscopy of Si devices

V. W. Ballarotto
, K. Siegrist
, R. J. Phaneuf
, E. D. Williams
, W. C. Yang
, R. J. Nemanich

Department of Physics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We investigate the variation in doping-induced contrast with photon energy in photoelectron emission microscopy images of Si pn devices using a free-electron laser as a tunable monochromatic light source. Photoyield is observed from p-doped regions of the devices for photon energies as low as 4.5 eV. Band tailing is the dominant effect contributing to the low energy photoyield from the heavily doped p regions. The low intensity tail from the n regions, however, may be from surface states.

Original language	English
Pages (from-to)	3547-3549
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	22
DOIs	https://doi.org/10.1063/1.1376151
State	Published - 28 May 2001

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title = "Photon energy dependence of contrast in photoelectron emission microscopy of Si devices",

abstract = "We investigate the variation in doping-induced contrast with photon energy in photoelectron emission microscopy images of Si pn devices using a free-electron laser as a tunable monochromatic light source. Photoyield is observed from p-doped regions of the devices for photon energies as low as 4.5 eV. Band tailing is the dominant effect contributing to the low energy photoyield from the heavily doped p regions. The low intensity tail from the n regions, however, may be from surface states.",

author = "Ballarotto, \{V. W.\} and K. Siegrist and Phaneuf, \{R. J.\} and Williams, \{E. D.\} and Yang, \{W. C.\} and Nemanich, \{R. J.\}",

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T1 - Photon energy dependence of contrast in photoelectron emission microscopy of Si devices

AU - Ballarotto, V. W.

AU - Siegrist, K.

AU - Phaneuf, R. J.

AU - Williams, E. D.

AU - Yang, W. C.

AU - Nemanich, R. J.

PY - 2001/5/28

Y1 - 2001/5/28

N2 - We investigate the variation in doping-induced contrast with photon energy in photoelectron emission microscopy images of Si pn devices using a free-electron laser as a tunable monochromatic light source. Photoyield is observed from p-doped regions of the devices for photon energies as low as 4.5 eV. Band tailing is the dominant effect contributing to the low energy photoyield from the heavily doped p regions. The low intensity tail from the n regions, however, may be from surface states.

AB - We investigate the variation in doping-induced contrast with photon energy in photoelectron emission microscopy images of Si pn devices using a free-electron laser as a tunable monochromatic light source. Photoyield is observed from p-doped regions of the devices for photon energies as low as 4.5 eV. Band tailing is the dominant effect contributing to the low energy photoyield from the heavily doped p regions. The low intensity tail from the n regions, however, may be from surface states.

UR - https://www.scopus.com/pages/publications/0035926662

U2 - 10.1063/1.1376151

DO - 10.1063/1.1376151

M3 - Article

AN - SCOPUS:0035926662

SN - 0003-6951

VL - 78

SP - 3547

EP - 3549

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Photon energy dependence of contrast in photoelectron emission microscopy of Si devices

Abstract

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