Photoreflectance study on the photovoltaic effect in InAs/GaAs quantum dot solar cell

Sujin Yoon; Seung Hyun Lee; Jae Cheol Shin; Jong Su Kim; Sang Jun Lee; Jae Young Leem; Sanjay Krishna

doi:10.1016/j.cap.2018.03.020

Photoreflectance study on the photovoltaic effect in InAs/GaAs quantum dot solar cell

Sujin Yoon, Seung Hyun Lee, Jae Cheol Shin, Jong Su Kim, Sang Jun Lee, Jae Young Leem, Sanjay Krishna

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

To investigate the effect of quantum dot (QD) layers on the photovoltaic process of InAs/GaAs QD solar cell (QDSC), QD layers were embedded in conventional GaAs p-n junction SC (GaAs SC) structures. The photoreflectance (PR) was examined at different temperatures (T) and excitation light intensities (I_ex) to investigate the photovoltaic effects through observation of the Franz-Keldysh oscillations (FKOs) in the PR spectra. The evaluated the p-n junction electric fields (F_pn) of the InAs QDSC was different from that of the GaAs SC. Moreover, InAs QDSC show that the different photovoltaic behaviors compared with GaAs SC by varying I_ex and T. From these considerations, we suggest that the different photovoltaic behaviors are caused by the effect of the additional photo-carrier generation in InAs QD layers resulting in enhancement of the field screening effect in F_pn.

Original language	English
Pages (from-to)	667-672
Number of pages	6
Journal	Current Applied Physics
Volume	18
Issue number	6
DOIs	https://doi.org/10.1016/j.cap.2018.03.020
State	Published - Jun 2018

Keywords

Franz-Keldysh oscillations
InAs/GaAs quantum dot solar cell
Photoreflectance
Photovoltaic effect

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10.1016/j.cap.2018.03.020

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@article{a3348d6c7f3e4a7e819d017d3091ea15,

title = "Photoreflectance study on the photovoltaic effect in InAs/GaAs quantum dot solar cell",

abstract = "To investigate the effect of quantum dot (QD) layers on the photovoltaic process of InAs/GaAs QD solar cell (QDSC), QD layers were embedded in conventional GaAs p-n junction SC (GaAs SC) structures. The photoreflectance (PR) was examined at different temperatures (T) and excitation light intensities (Iex) to investigate the photovoltaic effects through observation of the Franz-Keldysh oscillations (FKOs) in the PR spectra. The evaluated the p-n junction electric fields (Fpn) of the InAs QDSC was different from that of the GaAs SC. Moreover, InAs QDSC show that the different photovoltaic behaviors compared with GaAs SC by varying Iex and T. From these considerations, we suggest that the different photovoltaic behaviors are caused by the effect of the additional photo-carrier generation in InAs QD layers resulting in enhancement of the field screening effect in Fpn.",

keywords = "Franz-Keldysh oscillations, InAs/GaAs quantum dot solar cell, Photoreflectance, Photovoltaic effect",

author = "Sujin Yoon and Lee, {Seung Hyun} and Shin, {Jae Cheol} and Kim, {Jong Su} and Lee, {Sang Jun} and Leem, {Jae Young} and Sanjay Krishna",

note = "Publisher Copyright: {\textcopyright} 2018 Korean Physical Society",

year = "2018",

month = jun,

doi = "10.1016/j.cap.2018.03.020",

language = "English",

volume = "18",

pages = "667--672",

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TY - JOUR

T1 - Photoreflectance study on the photovoltaic effect in InAs/GaAs quantum dot solar cell

AU - Yoon, Sujin

AU - Lee, Seung Hyun

AU - Shin, Jae Cheol

AU - Kim, Jong Su

AU - Lee, Sang Jun

AU - Leem, Jae Young

AU - Krishna, Sanjay

PY - 2018/6

Y1 - 2018/6

N2 - To investigate the effect of quantum dot (QD) layers on the photovoltaic process of InAs/GaAs QD solar cell (QDSC), QD layers were embedded in conventional GaAs p-n junction SC (GaAs SC) structures. The photoreflectance (PR) was examined at different temperatures (T) and excitation light intensities (Iex) to investigate the photovoltaic effects through observation of the Franz-Keldysh oscillations (FKOs) in the PR spectra. The evaluated the p-n junction electric fields (Fpn) of the InAs QDSC was different from that of the GaAs SC. Moreover, InAs QDSC show that the different photovoltaic behaviors compared with GaAs SC by varying Iex and T. From these considerations, we suggest that the different photovoltaic behaviors are caused by the effect of the additional photo-carrier generation in InAs QD layers resulting in enhancement of the field screening effect in Fpn.

AB - To investigate the effect of quantum dot (QD) layers on the photovoltaic process of InAs/GaAs QD solar cell (QDSC), QD layers were embedded in conventional GaAs p-n junction SC (GaAs SC) structures. The photoreflectance (PR) was examined at different temperatures (T) and excitation light intensities (Iex) to investigate the photovoltaic effects through observation of the Franz-Keldysh oscillations (FKOs) in the PR spectra. The evaluated the p-n junction electric fields (Fpn) of the InAs QDSC was different from that of the GaAs SC. Moreover, InAs QDSC show that the different photovoltaic behaviors compared with GaAs SC by varying Iex and T. From these considerations, we suggest that the different photovoltaic behaviors are caused by the effect of the additional photo-carrier generation in InAs QD layers resulting in enhancement of the field screening effect in Fpn.

KW - Franz-Keldysh oscillations

KW - InAs/GaAs quantum dot solar cell

KW - Photoreflectance

KW - Photovoltaic effect

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U2 - 10.1016/j.cap.2018.03.020

DO - 10.1016/j.cap.2018.03.020

M3 - Article

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SN - 1567-1739

VL - 18

SP - 667

EP - 672

JO - Current Applied Physics

JF - Current Applied Physics

IS - 6

ER -

Photoreflectance study on the photovoltaic effect in InAs/GaAs quantum dot solar cell

Abstract

Keywords

UN SDGs

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