TY - JOUR
T1 - Photosensitivity of bulk and monolayer MoS2-based two-terminal devices
AU - Cho, Sangeun
AU - Park, Wooyoung
AU - Im, Hyunsik
AU - Kim, Hyungsang
N1 - Publisher Copyright:
© 2023, The Korean Physical Society.
PY - 2023/9
Y1 - 2023/9
N2 - Transition metal dichalcogenides (TMDCs), such as MoS2, MoSe2, WS2, and WSe2, have attracted enormous attention owing to their unique electrical and optical properties. A type of material known as TMDC has the MX2 formula with a direct bandgap in ultra-thin layers and indirect bandgap properties in the bulk. TMDCs have attracted significant research interest due to their use in nano-devices, opto-electronics, and next-generation electronics. In the study, two different MoS2 devices, Au–bulk MoS2–Au and Au–monolayer MoS2–Au, were fabricated, and their photon-induced current–voltage characteristics at different wavelengths (red ≈ 650 nm, green ≈ 532 nm and blue ≈ 450 nm) and values were compared. Additionally, the time-dependent photoresponses of these devices under red light irradiation (wavelength, λex = 650 nm) were analyzed. The Au–monolayer MoS2–Au device had a higher current response compared with the Au–bulk MoS2–Au device. These results suggest that single-layer MoS2 devices could be more efficient and responsive than bulk MoS2 devices for a variety of applications.
AB - Transition metal dichalcogenides (TMDCs), such as MoS2, MoSe2, WS2, and WSe2, have attracted enormous attention owing to their unique electrical and optical properties. A type of material known as TMDC has the MX2 formula with a direct bandgap in ultra-thin layers and indirect bandgap properties in the bulk. TMDCs have attracted significant research interest due to their use in nano-devices, opto-electronics, and next-generation electronics. In the study, two different MoS2 devices, Au–bulk MoS2–Au and Au–monolayer MoS2–Au, were fabricated, and their photon-induced current–voltage characteristics at different wavelengths (red ≈ 650 nm, green ≈ 532 nm and blue ≈ 450 nm) and values were compared. Additionally, the time-dependent photoresponses of these devices under red light irradiation (wavelength, λex = 650 nm) were analyzed. The Au–monolayer MoS2–Au device had a higher current response compared with the Au–bulk MoS2–Au device. These results suggest that single-layer MoS2 devices could be more efficient and responsive than bulk MoS2 devices for a variety of applications.
KW - Bulk MoS
KW - Monolayer MoS
KW - Photodetector
KW - Transition metal dichalcogenides
UR - http://www.scopus.com/inward/record.url?scp=85168270412&partnerID=8YFLogxK
U2 - 10.1007/s40042-023-00884-w
DO - 10.1007/s40042-023-00884-w
M3 - Article
AN - SCOPUS:85168270412
SN - 0374-4884
VL - 83
SP - 344
EP - 349
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
IS - 5
ER -