TY - JOUR
T1 - Photovoltaic induced self-powered gas sensor based on 2D MoS2 incorporated NbSe2 nanorods heterostructure for NH3 gas sensing at room temperature
AU - Saravanan, Adhimoorthy
AU - Huang, Bohr Ran
AU - Hwang, Seung Kyu
AU - Kathiravan, Deepa
AU - Wei-Wen Hsiao, Wesley
AU - Jayachitra, Ravichandran
AU - Abun, Abebaw
AU - Hong, Po Da
AU - Mohammadi, Ali
AU - Vilian, A. T.Ezhil
AU - Han, Young Kyu
AU - Suk Huh, Yun
N1 - Publisher Copyright:
© 2024 Elsevier B.V.
PY - 2024/7/1
Y1 - 2024/7/1
N2 - Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted significant attention for their optical and gas-sensing applications due to their exceptional sensitivity. Reliable selectivity and low power consumption are two major requirements for photodetector and gas sensor applications in next-generation electronic devices and the Internet of Things. Self-powered sensors (especially photovoltaic gas sensors) can solve these problems. In this study, for the first time, we report 2D TMDs (NbSe2-MoS2 hybrid) on a SiO2/Si substrate to fabricate photovoltaic self-powered gas sensors. The gas sensors are operated by the photovoltaic effect of the NbSe2-MoS2 nanostructure, which is prepared using the liquid phase exfoliation process. Initially, it was revealed that the present hybrid material exhibits photovoltaic properties under light illumination, with a circuit current of 0.25 µA and a circuit voltage of 34 mV. The NbSe2-MoS2 nanostructure characteristics were then used for NH3 gas sensing at different concentrations, and the gas sensing response was detected from low (8.8 % at 10 ppm) to high (28.8 % at 500 ppm) concentrations. The built-in electric field occurred between the NbSe2-MoS2 junction and eventually operated as a driving force for NbSe2-MoS2 gas sensing without an external bias voltage. The physisorption of gas molecules on their surface prompts a charge-transfer mechanism that improves the gas sensor response. The combined outcome of NbSe2-MoS2 heterostructures could pave way to next-generation gas sensing device fabrications.
AB - Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted significant attention for their optical and gas-sensing applications due to their exceptional sensitivity. Reliable selectivity and low power consumption are two major requirements for photodetector and gas sensor applications in next-generation electronic devices and the Internet of Things. Self-powered sensors (especially photovoltaic gas sensors) can solve these problems. In this study, for the first time, we report 2D TMDs (NbSe2-MoS2 hybrid) on a SiO2/Si substrate to fabricate photovoltaic self-powered gas sensors. The gas sensors are operated by the photovoltaic effect of the NbSe2-MoS2 nanostructure, which is prepared using the liquid phase exfoliation process. Initially, it was revealed that the present hybrid material exhibits photovoltaic properties under light illumination, with a circuit current of 0.25 µA and a circuit voltage of 34 mV. The NbSe2-MoS2 nanostructure characteristics were then used for NH3 gas sensing at different concentrations, and the gas sensing response was detected from low (8.8 % at 10 ppm) to high (28.8 % at 500 ppm) concentrations. The built-in electric field occurred between the NbSe2-MoS2 junction and eventually operated as a driving force for NbSe2-MoS2 gas sensing without an external bias voltage. The physisorption of gas molecules on their surface prompts a charge-transfer mechanism that improves the gas sensor response. The combined outcome of NbSe2-MoS2 heterostructures could pave way to next-generation gas sensing device fabrications.
KW - NbSe-MoS hybrid
KW - Niobium diselenide-molybdenum disulphide
KW - Photovoltaic gas sensors
KW - Self-powered gas sensor
KW - Two-dimensional nanostructure
UR - http://www.scopus.com/inward/record.url?scp=85192677169&partnerID=8YFLogxK
U2 - 10.1016/j.cej.2024.151795
DO - 10.1016/j.cej.2024.151795
M3 - Article
AN - SCOPUS:85192677169
SN - 1385-8947
VL - 491
JO - Chemical Engineering Journal
JF - Chemical Engineering Journal
M1 - 151795
ER -